ZHCSJ76A March 2018 – April 2019 DRV8343-Q1
PRODUCTION DATA.
The strength of the gate drive current, IDRIVE, is selected based on the gate-to-drain charge of the external MOSFETs and the target rise and fall times at the outputs. If IDRIVE is selected to be too low for a given MOSFET, then the MOSFET may not turn on completely within the tDRIVE time and a gate drive fault may be asserted. Additionally, slow rise and fall times result in higher switching power losses. TI recommends adjusting these values in the system with the required external MOSFETs and motor to determine the best possible setting for any application.
The IDRIVEP and IDRIVEN current for both the low-side and high-side MOSFETs are independently adjustable on SPI devices through the SPI registers. On hardware interface devices, both source and sink settings are selected at the same time on the IDRIVE pin.
For MOSFETs with a known gate-to-drain charge Qgd, desired rise time (tr), and a desired fall time (tf), use Equation 8 and Equation 9 to calculate the value of IDRIVEP and IDRIVEN (respectively).