ZHCSJ76A March 2018 – April 2019 DRV8343-Q1
PRODUCTION DATA.
The voltage supply for the high-side gate driver is created using a doubler charge pump that operates from the VM voltage supply input. The charge pump lets the gate driver correctly bias the high-side MOSFET gate with respect to the source across a wide input supply voltage range. The charge pump is regulated to keep a fixed output voltage VVCP and supports an average output current IGATE_HS. The charge pump is continuously monitored for undervoltage events to prevent under-driven MOSFET conditions. The charge pump requires a ceramic capacitor between the VM and VCP pins to act as the storage capacitor. Additionally, a flying capacitor is required between the CPH and CPL pins.
The voltage supply of the low-side gate driver is created using a linear regulator that operates from the VM voltage supply input. The linear regulator lets the gate driver correctly bias the low-side MOSFET gate with respect to ground. The linear regulator output is VGSL and supports an output current IGATE_LS.