米6体育平台手机版

ZHCSR68 August 2020 DS90LV028A-Q1

PRODUCTION DATA

6.2 ESD and Latch-Up Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±4000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±1250	V
I-Test+	Positive I-Test Latch-Up	Positive I-Test Latchup , per AEC Q100-004 at maximum ambient temperature (all signal pins)	+100	mA
I-Test-	Negative I-Test Latch-Up	Negative I-Test Latchup, per AEC Q100-004 at maximum ambient temperature (all signal pins except pin 3)	-100	mA
I-Test-	Negative I-Test Latch-Up	Negative I-Test Latchup, per AEC Q100-004 at maximum ambient temperature (pin 3)	-70	mA

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. .

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.