4 Revision History
Changes from Revision C (October 2016) to Revision D (December 2020)
- 注：采用 MicroStar Jr. BGA 封装的器件采用层压 nFBGA 封装进行了重新设计。这种 nFBGA 封装提供了类似于数据表中的电气性能。该封装占用空间也类似于 MicroStar Jr. BGA。将在整个数据表中更新全新封装标识符来代替已停止使用的封装标识符。Go
- 将 u*jr BGA 更改为 nFBGAGo
- Changed u*jr ZQE to nFBGA ZXH. Updated thermal
information.Go
- Corrected typo from HD3SS3412 to HD3SS212Go
Changes from Revision B (January 2014) to Revision C (October 2016)
- 添加了“器件信息”表、“ESD 等级”表、“特性说明”部分、“器件功能模式”、“应用和实施”部分、“电源相关建议”部分、“布局”部分、“器件和文档支持”部分以及“机械、封装和可订购信息”部分Go
- 删除了“订购信息”表。请参阅数据表末尾的 POAGo
Changes from Revision A (March 2012) to Revision B (January 2014)
Changes from Revision * (December 2011) to Revision A (March 2012)
- 将说明从“-40°C 至 85°C 的完全工业温度范围”更改为“-40°C 至 105°C 的完全工业温度范围”Go
- Added Operating Temperature to the Abs Max TableGo
- Changed the Operating free-air temperature From MAX = 85°C To: 105°CGo
- Changed the values of ψJT and ψJB in the Thermal Information tableGo
- Changed the MAX value of Leakage current (Dx_SEL), VDD = 0 V From: 8µA To: 10µAGo