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ZHCS170C April 2011 – April 2016 INA200-Q1 , INA201-Q1 , INA202-Q1

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DGK|8
- MPDS028E

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) ⁽¹⁾

		MIN	MAX	UNIT
Supply voltage, V_S		2.7	18	V
Current-shunt monitor analog inputs, V_IN+, V_IN–	Differential (V_IN+ – V_IN–)	–18	18	V
Current-shunt monitor analog inputs, V_IN+, V_IN–	Common mode⁽²⁾, V_CM = (V_IN+ + V_IN–) / 2	–16	80	V
Comparator analog input and reset pins, CMP_IN and RESET⁽²⁾		GND – 0.3	(V_S) + 0.3	V
Analog output, OUT⁽²⁾		GND – 0.3	(V_S) + 0.3	V
Comparator output, CMP_OUT⁽²⁾		GND – 0.3	18	V
Input current into any pin⁽²⁾			5	mA
Operating temperature, T_A		–40	125	°C
Junction temperature			150	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) This voltage may exceed the ratings shown if the current at that pin does not exceed 5 mA.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per AEC Q100-002⁽¹⁾	±2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per AEC Q100-011	±1000	V

(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
V_CM	Common-mode input voltage	–16	12	80	V
V_S	Operating supply voltage	2.7	12	18	V
T_A	Operating free-air temperature	–40	25	125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		INA20x-Q1	UNIT
		DGK (VSSOP)
		8 PINS
R_θJA	Junction-to-ambient thermal resistance	162.2	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	37.7	°C/W
R_θJB	Junction-to-board thermal resistance	82.9	°C/W
ψ_JT	Junction-to-top characterization parameter	1.3	°C/W
ψ_JB	Junction-to-board characterization parameter	81.4	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics: Current-Shunt Monitor

at T_A = 25°C, V_S = 12 V, V_CM = 12 V, V_SENSE = V_IN+ – V_IN–= 100 mV, R_L = 10 kΩ to GND, R_PULL-UP = 5.1 kΩ connected from CMP_OUT to V_S, and CMP_IN = GND (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
INPUT
V_SENSE	Full-scale sense input voltage	V_SENSE = V_IN+ – V_IN–			0.15	(V_S – 0.25) / Gain	V
V_CM	Common-mode input range	T_A = –40°C to 125°C		–16		80	V
CMR	Common-mode rejection	V_IN+ = –16 V to 80 V		80	100		dB
CMR	Common-mode rejection	V_IN+ = 12 V to 80 V, T_A = –40°C to 125°C.		100	123		dB
V_OS	Offset voltage, RTI⁽¹⁾	T_A = 25°C			±0.5	±2.5	mV
		T_A = 25°C to 125°C				±3	mV
		T_A = –40°C to 25°C				±3.5	mV
dV_OS/dT	Offset voltage, RTI, versus temperature	T_A = –40°C to 125°C			5		μV/°C
PSR	Offset voltage, RTI, versus power supply	V_OUT = 2 V, V_IN+ = 18 V, 2.7 V, T_A = –40°C to 125°C			2.5	100	μV/V
I_B	Input bias current, V_IN– Pin	T_A = –40°C to 125°C			±9	±16	μA
OUTPUT (V_SENSE ≥ 20mV)
G	Gain	INA200-Q1			20		V/V
		INA201-Q1			50		V/V
		INA202-Q1			100		V/V
	Gain error	V_SENSE = 20 mV to 100 mV			±0.2%	±1%
	Gain error	V_SENSE = 20 mV to 100 mV, T_A = –40°C to 125°C				±2%
	Total output error⁽²⁾	V_SENSE = 120 mV, V_S = 16 V			±0.75%	±2.2%
	Total output error⁽²⁾	V_SENSE = 120 mV, V_S = 16 V, T_A = –40°C to 125°C				±3.5%
	Nonlinearity error⁽³⁾	V_SENSE = 20 mV to 100 mV			±0.002%
R_O	Output impedance				1.5		Ω
C_LOAD	Maximum capacitive load	No sustained oscillation			10		nF
OUTPUT (V_SENSE < 20 mV)⁽⁴⁾
	Output	–16 V ≤ V_CM < 0 V	INA20x-Q1		300		mV
		0 V ≤ V_CM ≤ V_S, V_S = 5 V	INA200-Q1			0.4	V
			INA201-Q1			1	V
			INA202-Q1			2	V
		V_S < V_CM ≤ 80 V	INA20x-Q1		300		mV
VOLTAGE OUTPUT⁽⁵⁾
	Output swing to the positive rail	V_IN– = 11 V, V_IN+ = 12 V, T_A = –40°C to 125°C			(V_S) – 0.15	(V_S) – 0.25	V
	Output swing to GND⁽⁶⁾	V_IN– = 0 V, V_IN+ = –0.5 V, T_A = –40°C to 125°C			(V_GND) + 0.004	(V_GND) + 0.05	V
FREQUENCY RESPONSE
BW	Bandwidth	C_LOAD = 5 pF	INA200-Q1		500		kHz
			INA201-Q1		300		kHz
			INA202-Q1		200		kHz
	Phase margin	C_LOAD < 10 nF			40		Degrees
SR	Slew rate				1		V/μs
	Settling time (1%)	V_SENSE = 10 mV_PP to 100 mV_PP, C_LOAD = 5 pF			2		μs
NOISE, RTI
	Voltage noise density				40		nV/√Hz

(1) Offset is extrapolated from measurements of the output at 20 mV and 100 mV V_SENSE.

(2) Total output error includes effects of gain error and V_OS.

(3) Linearity is best fit to a straight line.

(4) For details on this region of operation, see the Accuracy Variations section in the Device Functional Modes.

(5) See Figure 7.

(6) Specified by design.

7.6 Electrical Characteristics: Comparator

at T_A = 25°C, V_S = 12 V, V_CM = 12 V, V_SENSE = 100 mV, R_L = 10 kΩ to GND, and R_PULL-UP = 5.1 kΩ connected from CMP_OUT to V_S (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
OFFSET VOLTAGE
	Threshold	T_A = 25°C	590	608	620	mV
	Threshold	T_A = –40°C to 125°C	586		625	mV
	Hysteresis⁽¹⁾	T_A = –40°C to 85°C		–8		mV
INPUT BIAS CURRENT⁽²⁾
	CMP_IN pin			0.005	10	nA
	CMP_IN pin	T_A = –40°C to 125°C			15	nA
INPUT VOLTAGE RANGE
	CMP_IN pin			0 to V_S – 1.5		V
OUTPUT (OPEN-DRAIN)
	Large-signal differential voltage gain	CMP_OUT = 1 V to 4 V, R_L ≥ 15 kΩ connected to 5 V		200		V/mV
I_LKG	High-level leakage current⁽³⁾⁽⁴⁾	V_ID = 0.4 V, V_OH = V_S		0.0001	1	μA
V_OL	Low-level output voltage⁽³⁾	V_ID = –0.6 V, I_OL = 2.35 mA		220	300	mV
RESPONSE TIME
	Response time⁽⁵⁾	R_L to 5 V, C_L = 15 pF, 100-mV input step with 5-mV overdrive		1.3		μs
RESET
	RESET threshold⁽⁶⁾			1.1		V
	Logic input impedance			2		MΩ
	Minimum RESET pulse duration			1.5		μs
	RESET propagation delay			3		μs

(1) Hysteresis refers to the threshold (the threshold specification applies to a rising edge of a noninverting input) of a falling edge on the noninverting input of the comparator; see Figure 25.

(2) Specified by design.

(3) V_ID refers to the differential voltage at the comparator inputs.

(4) Pulling the open-drain output to the range of 2.7 V to 18 V is permissible, regardless of V_S.

(5) The comparator response time specified is the interval between the input step function and the instant when the output crosses 1.4 V.

(6) The RESET input has an internal 2-MΩ (typical) pulldown. Leaving RESET open results in a low state, with transparent comparator operation.

7.7 Electrical Characteristics: General

at T_A = 25°C, V_S = 12 V, V_CM = 12 V, V_SENSE = 100 mV, R_L = 10 kΩ to GND, R_PULL-UP = 5.1 kΩ connected from CMP_OUT to V_S, and CMP_IN = 1 V (unless otherwise noted)

GENERAL PARAMETERS		CONDITIONS	TYP	MAX	UNIT
POWER SUPPLY
I_Q	Quiescent current	V_OUT = 2 V	1350	1800	μA
I_Q	Quiescent current	V_SENSE = 0 mV, T_A = –40°C to 125°C		1850	μA
	Comparator power-on reset threshold⁽¹⁾		1.5		V

(1) The INA20x-Q1 devices power up with the comparator in a defined reset state as long as the RESET pin is open or grounded. The comparator is in reset as long as the power supply is below the voltage shown here. The comparator assumes a state based on the comparator input above this supply voltage. If RESET is high at power up, the comparator output comes up high and requires a reset to assume a low state, if appropriate.