ZHCSDO5C April   2015  – September 2023

PRODUCTION DATA  

  1.   1
  2. 特性
  3. 应用
  4. 说明
  5. Revision History
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Integrated Shunt Resistor
      2. 7.3.2 Short-Circuit Duration
      3. 7.3.3 Temperature Stability
    4. 7.4 Device Functional Modes
      1. 7.4.1 Amplifier Operation
      2. 7.4.2 Input Filtering
        1. 7.4.2.1 Calculating Gain Error Resulting from External Filter Resistance
      3. 7.4.3 Shutting Down the Device
      4. 7.4.4 Using the Device with Common-Mode Transients Above 36 V
  9. Applications and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Current Summing
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curve
      2. 8.2.2 Parallel Multiple INA250 Devices for Higher Current
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curve
      3. 8.2.3 Current Differencing
        1. 8.2.3.1 Design Requirements
        2. 8.2.3.2 Detailed Design Procedure
        3. 8.2.3.3 Application Curve
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 接收文档更新通知
    3. 9.3 支持资源
    4. 9.4 Trademarks
    5. 9.5 静电放电警告
    6. 9.6 术语表
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Revision History

Changes from Revision B (December 2015) to Revision C (September 2023)

  • 更改了整个文档中的表格、图和交叉参考的编号格式Go
  • 器件信息 表更改为封装信息 Go
  • Changed the Shunt resistance (SH+ to SH–) minimum value for use as stand-alone resistor from: 1.9 mΩ to 1.8 mΩ in the Electrical Characteristics tableGo
  • Changed the Shunt resistance (SH+ to SH–) minimum value for use as stand-alone resistor from: 2.1 mΩ to 2.2 mΩ in the Electrical Characteristics tableGo

Changes from Revision A (May 2015) to Revision B (December 2015)

  • INA250A1、INA250A3 和 INA250A4 已投入生产Go
  • 新增了 TI 设计Go
  • Added parameters for INA250A1, INA250A3, and INA250A4 to Electrical Characteristics tableGo
  • Added ± to specifications for the Shunt short time overload, Shunt thermal shock, Shunt resistance to solder heat, Shunt high temperature exposure, and Shunt cold temperature storage parameters of Electrical Characteristics tableGo
  • Added curves for INA250A1, INA250A3, and INA250A4 to Typical Characteristics section Go
  • Added Amplifier Operation section Go

Changes from Revision * (April 2015) to Revision A (May 2015)

  • INA250A2 已投入生产Go