ZHCSEV7I June 2011 – October 2019 LM5113
PRODUCTION DATA.
The start-up voltage sequencing for this device is as follows: VDD voltage first, with the VIN voltage present thereafter.
The LM5113 requires an external bootstrap diode with a 20-Ω series resistor to charge the high-side supply on a cycle-by-cycle basis. The recommended bootstrap diode options are BAT46, BAT41, or LL4148.
The LM5113 has an Undervoltage Lockout (UVLO) on both the VDD and bootstrap supplies. When the VDD voltage is below the threshold voltage of 3.8 V, both the HI and LI inputs are ignored, to prevent the GaN FETs from being partially turned on. Also if there is insufficient VDD voltage, the UVLO will actively pull the LOL and HOL low. When the HB to HS bootstrap voltage is below the UVLO threshold of 3.2 V, only HOL is pulled low. Both UVLO threshold voltages have 200 mV of hysteresis to avoid chattering.
CONDITION (VHB-HS > VHBR for all cases below) | HI | LI | HO | LO |
---|---|---|---|---|
VDD - VSS < VDDR during device start-up | H | L | L | L |
VDD - VSS < VDDR during device start-up | L | H | L | L |
VDD - VSS < VDDR during device start-up | H | H | L | L |
VDD - VSS < VDDR during device start-up | L | L | L | L |
VDD - VSS < VDDR - VDDH after device start-up | H | L | L | L |
VDD - VSS < VDDR - VDDH after device start-up | L | H | L | L |
VDD - VSS < VDDR - VDDH after device start-up | H | H | L | L |
VDD - VSS < VDDR - VDDH after device start-up | L | L | L | L |
CONDITION (VDD > VDDR for all cases below) | HI | LI | HO | LO |
---|---|---|---|---|
VHB-HS < VHBR during device start-up | H | L | L | L |
VHB-HS < VHBR during device start-up | L | H | L | H |
VHB-HS < VHBR during device start-up | H | H | L | H |
VHB-HS < VHBR during device start-up | L | L | L | L |
VHB-HS < VHBR - VHBH after device start-up | H | L | L | L |
VHB-HS < VHBR - VHBH after device start-up | L | H | L | H |
VHB-HS < VHBR - VHBH after device start-up | H | H | L | H |
VHB-HS < VHBR - VHBH after device start-up | L | L | L | L |