ZHCSOW5B September   2021  – July 2022 LM74721-Q1

PRODUCTION DATA  

  1. 特性
  2. 应用
  3. 说明
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Reverse Battery Protection (A, C, GATE)
        1. 8.3.1.1 Input TVS Less Operation: VDS Clamp
      2. 8.3.2 Load Disconnect Switch Control (PD)
      3. 8.3.3 Overvoltage Protection and Battery Voltage Sensing (VSNS, SW, OV)
      4. 8.3.4 Boost Regulator
    4. 8.4 Shutdown Mode
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical 12-V Reverse Battery Protection Application
      1. 9.2.1 Design Requirements for 12-V Battery Protection
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Boost Converter Components (C2, C3, L1)
        2. 9.2.2.2 Input and Output Capacitance
        3. 9.2.2.3 Hold-Up Capacitance
        4. 9.2.2.4 MOSFET Selection: Q1
      3. 9.2.3 Application Curves
    3. 9.3 What to Do and What Not to Do
  10. 10Power Supply Recommendations
    1. 10.1 Transient Protection
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 接收文档更新通知
    2. 12.2 支持资源
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DRR|12
散热焊盘机械数据 (封装 | 引脚)
订购信息

Reverse Battery Protection (A, C, GATE)

A, C, GATE comprises of ideal diode stage. Connect the Source of the external MOSFET to A, Drain to C and Gate to GATE pin. The LM74721-Q1 has integrated reverse input protection down to –33 V.

In LM74721-Q1 the voltage drop across the MOSFET is continuously monitored between the A and C pins, and the GATE to A voltage is adjusted as needed to regulate the forward voltage drop at 17 mV (typical) for LM74721-Q1. This closed loop regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and ensures zero DC reverse current flow. This scheme ensures robust performance during slow input voltage ramp down tests. Along with the linear regulation amplifier scheme, the LM74721-Q1 also integrates a fast reverse voltage comparator. When the voltage drop across A and C reaches V(AC_REV) threshold, then the GATE goes low within 0.5 µs (typical). This fast reverse voltage comparator scheme ensures robust performance during fast input voltage ramp down tests such as input micro-shorts. The external MOSFET is turned ON back when the voltage across A and C hits V(AC_FWD) threshold within 1.9 µs (typical) for LM74721-Q1. For ideal diode only designs, connect LM74721-Q1 as shown in Figure 8-1

GUID-20210428-CA0I-WBBD-ZNS5-67B4GLF3NQDR-low.gifFigure 8-1 Configuring LM74721-Q1 for Ideal Diode Only