LM74722-Q1 controls two N-channel power MOSFETs with GATE used to control diode MOSFET to emulate an ideal diode and PD controlling second MOSFET for power path cutoff when disabled or during an overvoltage protection and provide inrush current limiting. IQ during operation (EN = High) is < 38 µA and < 3.5 µA during shutdown mode (EN = Low). LM74722-Q1 can be placed into low quiescent current mode using EN = low, where both GATE and PD are turned OFF.