The LM749x0-Q1 feature two separate gate control and driver outputs i.e DGATE and HGATE to drive back to back N-channel MOSFETs. This enables LM749x0-Q1 to provide comprehensive immunity with robust system protection during various automotive transient tests as per ISO 7637-2 and ISO 16750-2 standard as well as other automotive OEM standards. For more information, see the Automotive EMC-compliant reverse-battery protection with ideal-diode controllers article.

LM749x0-Q1 gate drive output DGATE controls MOSFET Q1 to provide reverse battery protection and true reverse current blocking functionality. HGATE controls MOSFET Q2 to turn off the power path during input overvoltage condition. Resistor network R1, R2 and R3, R4 connected from SW pin to ground can be configured for undervoltage and overvoltage protection. Bi-directional TVS D1 clamps the automotive transient input voltages on the 12-V battery, both positive and negative transients, to voltage levels safe for MOSFET Q1 and LM749x0-Q1.

Fast reverse current blocking response and quick reverse recovery enables LM749x0-Q1 to turn ON/OFF MOSFET Q1 during AC super imposed input specified by ISO 16750-2 and LV124 E-06 and provide active rectification of the AC input superimposed on DC battery voltage. Fast reverse current blocking response of LM749x0-Q1 helps to turn off MOSFET Q1 during negative transients inputs such as –150-V 2-ms Pulse 1 specified in ISO 7637-2 and input micro short conditions such as LV124 E-10 test.