ZHCSO86B
december 2022 – july 2023
LM74900-Q1
,
LM74910-Q1
PRODUCTION DATA
1
1
特性
2
应用
3
说明
4
Revision History
5
Device Comparison Table
6
Pin Configuration and Functions
7
Specifications
7.1
Absolute Maximum Ratings
7.2
ESD Ratings
7.3
Recommended Operating Conditions
7.4
Thermal Information
7.5
Electrical Characteristics
7.6
开关特性
7.7
Typical Characteristics
8
Parameter Measurement Information
9
Detailed Description
9.1
Overview
9.2
Functional Block Diagram
9.3
Feature Description
9.3.1
Charge Pump
9.3.2
Dual Gate Control (DGATE, HGATE)
9.3.2.1
Reverse Battery Protection (A, C, DGATE)
9.3.2.2
Load Disconnect Switch Control (HGATE, OUT)
9.3.3
Overcurrent Protection (CS+, CS-, ILIM, IMON, TMR)
9.3.3.1
Pulse Overload Protection, Circuit Breaker
9.3.3.2
Overcurrent Protection With Latch-Off
9.3.3.3
Short Circuit Protection (ISCP)
9.3.3.4
Analog Current Monitor Output (IMON)
9.3.4
Undervoltage Protection, Overvoltage Protection, and Battery Voltage Sensing (UVLO, OV, SW)
9.3.5
Low IQ SLEEP Mode (SLEEP)
9.3.6
Ultra Low IQ Shutdown (EN)
10
Applications and Implementation
10.1
Application Information
10.2
Typical 12-V Reverse Battery Protection Application
10.2.1
Design Requirements for 12-V Battery Protection
10.2.2
Automotive Reverse Battery Protection
10.2.2.1
Input Transient Protection: ISO 7637-2 Pulse 1
10.2.2.2
AC Super Imposed Input Rectification: ISO 16750-2 and LV124 E-06
10.2.2.3
Input Micro-Short Protection: LV124 E-10
10.2.3
Detailed Design Procedure
10.2.3.1
Design Considerations
10.2.3.2
Charge Pump Capacitance VCAP
10.2.3.3
Input and Output Capacitance
10.2.3.4
Hold-Up Capacitance
10.2.3.5
Selection of Current Sense Resistor, RSNS
10.2.3.6
Selection of Scaling Resistor (RSET) and Short-Circuit Protection Setting Resistor (RSCP)
10.2.3.7
Overcurrent Limit (ILIM), Circuit Breaker Timer (TMR), and Current Monitoring Output (IMON) Selection
10.2.3.8
Overvoltage Protection and Battery Monitor
10.2.4
MOSFET Selection: Blocking MOSFET Q1
10.2.5
MOSFET Selection: Hot-Swap MOSFET Q2
10.2.6
TVS Selection
10.2.7
Application Curves
10.3
Addressing Automotive Input Reverse Battery Protection Topologies With LM749x0-Q1
10.4
Power Supply Recommendations
10.4.1
Transient Protection
10.4.2
TVS Selection for 12-V Battery Systems
10.5
Layout
10.5.1
Layout Guidelines
11
Device and Documentation Support
11.1
接收文档更新通知
11.2
支持资源
11.3
Trademarks
11.4
静电放电警告
11.5
术语表
12
Mechanical, Packaging, and Orderable Information
封装选项
机械数据 (封装 | 引脚)
RGE|24
MPQF124G
散热焊盘机械数据 (封装 | 引脚)
RGE|24
QFND703
订购信息
zhcso86b_oa
zhcso86b_pm
7.7
Typical Characteristics
Figure 7-1
Operating Quiescent Current vs Supply Voltage
Figure 7-3
SLEEP Mode Current vs Supply Voltage
A.
Figure 7-5
Charge Pump Current vs Supply Voltage at CAP – VS ≥ 6 V (LM74910-Q1)
A.
Figure 7-7
Charge Pump V-I Characteristics at VS ≥ 12 V (LM74910-Q1)
A.
Figure 7-9
HGATE Drive Voltage vs Supply Voltage
A.
Figure 7-11
UVLO Thresholds vs Temperature
A.
Figure 7-13
Charge Pump UVLO Threshold vs Temperature
Figure 7-15
ISCP Bias Current vs Temperature
Figure 7-17
VS POR Threshold vs Temperature
Figure 7-19
DGATE Turn On Delay During Forward Conduction
Figure 7-21
HGATE Turn OFF Delay During SCP
Figure 7-2
Shutdown Current vs Supply Voltage
A.
Figure 7-4
Charge Pump Current vs Supply Voltage at CAP – VS ≥ 6 V (LM74900-Q1)
A.
Figure 7-6
Charge Pump V-I Characteristics at VS ≥ 12 V (LM74900-Q1)
A.
Figure 7-8
DGATE Drive Voltage vs Supply Voltage
A.
Figure 7-10
ANODE Leakage Current vs Reverse ANODE Voltage
A.
Figure 7-12
OVP Thresholds vs Temperature
Figure 7-14
ISCP to CS– Threshold vs Temperature
A.
Figure 7-16
VA POR Threshold vs Temperature
Figure 7-18
DGATE Turn OFF Delay
Figure 7-20
HGATE Turn OFF Delay During OV
A.
Figure 7-22
Current Monitor Output vs Sense Voltage (R
IMON
= 5kΩ, R
SET
= 50Ω)
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