ZHCSO86B december 2022 – july 2023 LM74900-Q1 , LM74910-Q1
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY VOLTAGE | ||||||
| V(VS) | Operating input voltage | 3 | 65 | V | ||
| V(VS_PORR) | VS POR threshold, rising | 2.4 | 2.6 | 2.9 | V | |
| V(VS_PORF) | VS POR threshold, falling | 2.2 | 2.4 | 2.7 | V | |
| I(SHDN) | SHDN current, I(GND) | V(EN) = 0 V | 2.5 | 5 | µA | |
| I(SLEEP) | SLEEP mode current, I(GND) | V(EN) = 2 V, V(SLEEP) = 0 V | 5.5 | 10 | µA | |
| I(Q) | Total System Quiescent current, I(GND) | V(EN) = 2 V | 630 | 750 | µA | |
| V(A) = V(VS) = 24 V, V(EN) = 2 V | 635 | 750 | µA | |||
| I(REV) | I(A) leakage current during Reverse Polarity, | 0 V ≤ V(A) ≤ – 65 V | –100 | –35 | µA | |
| I(OUT) leakage current during Reverse Polarity | –1 | –0.3 | µA | |||
| ENABLE | ||||||
| V(ENF) | Enable rising threshold voltage | 0.6 | 0.8 | 1.05 | V | |
| V(ENF) | Enable threshold voltage for low Iq shutdown, falling | 0.41 | 0.7 | 0.98 | V | |
| I(EN) | 0 V ≤ V(EN) ≤ 65 V | 55 | 200 | nA | ||
| UNDER VOLTAGE LOCKOUT COMPARATOR (SW, UVLO) | ||||||
| V(UVLOR) | UVLO threshold voltage, rising | 0.585 | 0.6 | 0.63 | V | |
| V(UVLOF) | UVLO threshold voltage, falling | 0.533 | 0.55 | 0.573 | V | |
| I(UVLO) | 0 V ≤ V(UVLO) ≤ 5 V | 50 | 200 | nA | ||
| OVER VOLTAGE PROTECTION AND BATTERY SENSING (SW, OV) INPUT | ||||||
| R(SW) | Battery sensing disconnect switch resistance | 3 V ≤ V(A) ≤ 65 V | 10 | 22.5 | 46 | Ω |
| V(OVR) | Overvoltage threshold input, rising | 0.585 | 0.6 | 0.63 | V | |
| V(OVF) | Overvoltage threshold input, falling | 0.533 | 0.55 | 0.573 | V | |
| I(OV) | OV Input leakage current | 0 V ≤ V(OV) ≤ 5 V | 50 | 200 | nA | |
| CURRENT SENSE AMPLIFIER | ||||||
| V(OFFSET) | Input referred offset (VSNS to VIMON scaling) | RSET = 50Ω, RIMON = 5kΩ, 10kΩ (corresponds to VSNS = 6mV to 30mV) Gain of 45 and 90 respectively. | -2.1 | 2.1 | mV | |
| V(GE_SET) | VSNS to VIMON scaling | RSET = 50Ω, RIMON = 5kΩ, (corresponds to VSNS = 6mV to 30mV) | 82 | 90 | 97 | |
| V(SNS_TH) | OCP comparator threshold, rising (ILIM) | 1.08 | 1.22 | 1.32 | ||
| V(SNS_TH) | OCP comparator threshold, falling (ILIM) | 1.02 | 1.15 | 1.25 | V | |
| ISCP | SCP Input Bias current | VISCP = 12V | 9.5 | 10.5 | 12 | µA |
| V(SNS_SCP) | SCP threshold | R(ISCP) = 0Ω (ISCP connected to VS) | 17.86 | 20 | 22.77 | mV |
| V(SNS_SCP) | SCP threshold | R(ISCP) = 1kΩ (external) | 31 | mV | ||
| IMON_ACC | Current monitor output accuracy | VSENSE = 20mV | -12.5 | 12.5 | % | |
| FAULT | ||||||
| R(FLT) | FLT_I Pull-down resistance | 11 | 25 | 60 | Ω | |
| I_FLT | FLT Input leakage current | 0 V ≤ V(FLT) ≤ 20 V | –100 | 400 | nA | |
| DELAY TIMER (TMR) | ||||||
| I(TMR_SRC_CB) | TMR source current | 65 | 85 | 97 | µA | |
| I(TMR_SRC_FLT) | TMR source current | 1.94 | 2.7 | 3.4 | µA | |
| I(TMR_SNK) | TMR sink current | 2 | 2.7 | 3.15 | µA | |
| V(TMR_OC) | Voltage at TMR pin for IWRN shut off | 1.1 | 1.2 | 1.4 | V | |
| V(TMR_FLT) | Voltage at TMR pin for IFLT triggerring | 1.04 | 1.1 | 1.2 | V | |
| V(TMR_LOW) | Voltage at TMR pin for AR counter falling threshold | 0.1 | 0.2 | 0.3 | V | |
| N(A_R_Count) | Number of autoretry cycles | 32 | ||||
| CHARGE PUMP (CAP) | ||||||
| I(CAP) | Charge Pump source current (Charge pump on) | V(CAP) – V(A) = 7 V, 6 V ≤ V(S) ≤ 65 V | 1.3 | 2.7 | mA | |
| V(CAP) – V(A) = 7 V, VS= 65 V, LM74910-Q1 Only | 2.5 | 4.2 | mA | |||
| VCAP – VS | Charge Pump Turn ON voltage | 11 | 12.2 | 13.2 | V | |
| Charge Pump Turnoff voltage | 11.9 | 13.2 | 14.1 | V | ||
| V(CAP UVLO) | Charge Pump UVLO voltage threshold, rising | 5.4 | 6.6 | 7.9 | V | |
| Charge Pump UVLO voltage threshold, falling | 4.4 | 5.5 | 6.6 | V | ||
| IDEAL DIODE (A, C, DGATE) | ||||||
| V(A_PORR) | V(A) POR threshold, rising | 2.2 | 2.45 | 2.7 | V | |
| V(A_PORF) | V(A) POR threshold, falling | 2 | 2.25 | 2.45 | V | |
| V(AC_REG) | Regulated Forward V(A)–V(C) Threshold | 3.6 | 10.5 | 13.4 | mV | |
| V(AC_REV) | V(A)–V(C) Threshold for Fast Reverse Current Blocking | –16 | –10.5 | –5 | mV | |
| V(AC_FWD) | V(A)–V(C) Threshold for Reverse to Forward transition | 150 | 177 | 200 | mV | |
| V(DGATE) – V(A) | Gate Drive Voltage | 3 V < V(S) < 5 V | 7 | V | ||
| 5 V < V(S) < 65 V | 9.2 | 11.5 | 14 | V | ||
| I(DGATE) | Peak Gate Source current | V(A) – V(C) = 100 mV, V(DGATE) – V(A) = 1 V | 18.5 | mA | ||
| Peak Gate Sink current | V(A) – V(C) = –12 mV, V(DGATE) – V(A) = 11 V | 2670 | mA | |||
| Regulation sink current | V(A) – V(C) = 0 V, V(DGATE) – V(A) = 11 V | 5 | 13.5 | µA | ||
| I(C) | Cathode leakage Current | V(A) = –14 V, V(C) = 12 V | 4 | 9 | 32 | µA |
| HIGH SIDE CONTROLLER (HGATE, OUT) | ||||||
| V(HGATE) – V(OUT) | Gate Drive Voltage | 3 V < V(S) < 5 V | 7 | V | ||
| 5 V < V(S) < 65 V | 10 | 11.1 | 14.5 | V | ||
| I(HGATE) | Source Current | 39 | 55 | 75 | µA | |
| Sink Current | V(OV) > V(OVR) | 128 | 180 | mA | ||
| SLEEP MODE | ||||||
| V(SLEEPR) | SLEEP high threshold voltage | 0.85 | 1.05 | V | ||
| V(SLEEPF) | SLEEP threshold voltage for low Iq shutdown, falling | 0.41 | 0.7 | V | ||
| I(SLEEP) | SLEEP input leakage current | 100 | 160 | nA | ||
| Overvoltage threshold | SLEEP mode overvoltage rising threshold | SLEEP=Low, EN=High | 19.3 | 21.3 | 23 | V |
| Overvoltage threshold | SLEEP mode overvoltage threshold | SLEEP=Low, EN=High | 18.4 | 21 | 22.2 | V |
| Overcurrent threshold | SLEEP mode overcurrent threshold (device Latch-off) | 150 | 250 | 310 | mA | |
| T(TSD) | SLEEP mode TSD Threshold, rising | SLEEP=Low, EN=High | 155 | ℃ | ||
| T(TSDhyst) | TSD Hysteresis | SLEEP=Low, EN=High | 10 | ℃ | ||