SNOS738I April   1995  – January 2017 LM9061 , LM9061-Q1

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings: LM9061
    3. 6.3 ESD Ratings: LM9061-Q1
    4. 6.4 Recommended Operating Conditions
    5. 6.5 Thermal Information
    6. 6.6 Electrical Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 MOSFET Gate Drive
      2. 7.3.2 Basic Operation
      3. 7.3.3 Turn On and Turn Off Characteristics
      4. 7.3.4 Lossless Overcurrent Protection
      5. 7.3.5 Delay Timer
        1. 7.3.5.1 Minimum Delay Time
      6. 7.3.6 Overvoltage Protection
      7. 7.3.7 Reverse Battery
      8. 7.3.8 Low Battery
      9. 7.3.9 Increasing MOSFET Turnon Time
    4. 7.4 Device Functional Modes
      1. 7.4.1 Operation With VCC > 30 V
      2. 7.4.2 Operation With VCC < 6.2 V
      3. 7.4.3 Operation With ON/OFF Control
      4. 7.4.4 MOSFET Latch-OFF
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 TITLE NEEDED
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Bidirectional Applications
        1. 8.2.2.1 Back-to-Back MOSFET Configuration
          1. 8.2.2.1.1 Application Curve
        2. 8.2.2.2 Bidirectional Switch With Reverse Overcurrent Protection
          1. 8.2.2.2.1 Application Curve
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Related Links
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

11 Device and Documentation Support

11.1 Documentation Support

11.1.1 Related Documentation

For related documentation, see the following:

LM9061 High-Side Protection Controller EVM (SNOU132)

11.2 Related Links

The table below lists quick access links. Categories include technical documents, support and community resources, tools and software, and quick access to sample or buy.

Table 1. Related Links

PARTS PRODUCT FOLDER SAMPLE & BUY TECHNICAL DOCUMENTS TOOLS & SOFTWARE SUPPORT & COMMUNITY
LM9061 Click here Click here Click here Click here Click here
LM9061-Q1 Click here Click here Click here Click here Click here

11.3 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

11.4 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.5 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.6 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.7 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.
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