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LM9061-Q1

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汽车类 7V 至 26V 高侧保护控制器

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LM9061-Q1

正在供货
数据表 立即订购

米6体育平台手机版_好二三四详情

FET External Vin (min) (V) 7 Vin (max) (V) 26 Vabsmax_cont (V) 60 Current limit (min) (A) 0.01 Current limit (max) (A) 500 Overcurrent response Circuit breaker, current limiting Fault response Latch-off Soft start Adjustable Overvoltage response Cut-off Rating Automotive Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125 Function Inductive load compatibility, Overvoltage protection Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005
FET External Vin (min) (V) 7 Vin (max) (V) 26 Vabsmax_cont (V) 60 Current limit (min) (A) 0.01 Current limit (max) (A) 500 Overcurrent response Circuit breaker, current limiting Fault response Latch-off Soft start Adjustable Overvoltage response Cut-off Rating Automotive Device type eFuses and hot swap controllers Operating temperature range (°C) -40 to 125 Function Inductive load compatibility, Overvoltage protection Quiescent current (Iq) (typ) (A) 0.005 Quiescent current (Iq) (max) (A) 0.005
SOIC (D) 8 29.4 mm² 4.9 x 6
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input
  • Qualified for Automotive Applications
  • AEC-Q100 Qualified With the Following Results:
    • Device HBM ESD Classification Level 2
    • Device CDM ESD Classification Level C4B
  • Withstands 60-V Supply Transients
  • Overvoltage Shut-OFF With VCC > 30 V
  • Lossless Overcurrent Protection Latch-OFF
    • Current Sense Resistor is Not Required
    • Minimizes Power Loss With High Current Loads
  • Programmable Delay of Protection Latch-OFF
  • Gradual Turnoff to Minimize Inductive Load Transient Voltages
  • CMOS Logic-Compatible ON and OFF Control Input

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.

The LM9061 family consists of charge-pump devices which provides the gate drive to an external power MOSFET of any size configured as a high-side driver or switch. This includes multiple parallel connected MOSFETs for very high current applications. A CMOS logic-compatible ON and OFF input controls the output gate drive voltage. In the ON state, the charge pump voltage, which is well above the available VCC supply, is directly applied to the gate of the MOSFET. A built-in 15-V Zener clamps the maximum gate to source voltage of the MOSFET. When commanded OFF a 110-µA current sink discharges the gate capacitances of the MOSFET for a gradual turnoff characteristic to minimize the duration of inductive load transient voltages and further protect the power MOSFET.

Lossless protection of the power MOSFET is a key feature of the LM9061. The voltage drop (VDS) across the power device is continually monitored and compared against an externally programmable threshold voltage. A small current-sensing resistor in series with the load, which causes a loss of available energy, is not required for the protection circuitry. If the VDS voltage, due to excessive load current, exceeds the threshold voltage, the output is latched OFF in a more gradual fashion (through a 10-µA output current sink) after a programmable delay time interval.
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LM5060 正在供货 5.5V 至 65V 高侧保护控制器 This product is a positive high voltage hot swap / Inrush current controller With power limiting
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类型 标题 下载最新的英语版本 日期
* 数据表 LM9061 and LM9061-Q1 High-Side Protection Controller 数据表 (Rev. I) PDF | HTML 2017年 1月 4日
电子书 11 Ways to Protect Your Power Path 2019年 7月 3日
EVM 用户指南 LM9061 High-Side Protection Controller EVM 2014年 11月 7日

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评估板

LM9061EVM — LM9061EVM 高侧保护控制器评估模块

LM9061EVM 评估模块演示的是接电负载的高侧保护，用于防护过流和过压的情况。高侧 MOSFET 的栅极驱动由一个开/关输入控制。过流保护会在从 MOSFET 中监测到压降 (VDS) 时启用，压降参考的是外部可编程阈值电压。如果 VDS 电压因过高的负载电流而超出阈值电压，MOSFET 的栅极驱动就会关闭，从而断开负载与输入电源的连接。与负载串联的电流感应电阻器并非保护电路所必需，这样可以在较高的电流负载下获得更高的性能。

用户指南: PDF
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参考设计

PMP9498 — 具有过流和过压关断功能的汽车类电池反向保护参考设计

PMP9498 是一套完整的前端保护解决方案，适用于需要反向电压、过压或过流保护的汽车系统。它还实现了负载开关功能，能够以数字方式控制负载与输入电源的连接和断开。该设计可满足汽车应用在关闭期间的低 Iq 要求，并且采用了强大的栅极电流源（典型值 30mA），可驱动大功率 MOSFET，因此适合高电流应用。
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包含信息：
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