SNOS738I April 1995 – January 2017 LM9061 , LM9061-Q1
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage | 60 | V | ||
Output voltage | VCC + 15 | V | ||
Voltage at sense and threshold (through 1 kΩ) | −25 | 60 | V | |
ON/OFF input voltage | −0.3 | VCC + 0.3 | V | |
Reverse supply current | 20 | mA | ||
Junction temperature | 150 | °C | ||
Lead temperature soldering, 10 seconds | 260 | °C | ||
Storage temperature, Tstg | −55 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2000 | V | |
Charged-device model (CDM), per AEC Q100-011 | All pins except 1, 4, 5, and 8 | ±1000 | |||
Pins 1, 4, 5, and 8 | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
Supply voltage | 7 | 26 | V | ||
ON/OFF input voltage | −0.3 | VCC | V | ||
Ambient temperature: LM9061 | −40 | 125 | °C | ||
Junction temperature: LM9061-Q1 | −40 | 125 | °C |
THERMAL METRIC(1) | LM9061, LM9061-Q1 | UNIT | |
---|---|---|---|
D (SOIC) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 150 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 46.7 | °C/W |
RθJB | Junction-to-board thermal resistance | 49.1 | °C/W |
ψJT | Junction-to-top characterization parameter | 6.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 48.4 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLY | ||||||
IQ | Quiescent supply current | ON/OFF = 0 | 5 | mA | ||
ICC | Operating supply current | ON/OFF = 1, CLOAD = 0.025 µF, includes turnon transient output current |
40 | mA | ||
ON/OFF CONTROL INPUT | ||||||
VIN(0) | ON/OFF input logic 0 | VOUT = OFF | 1.5 | V | ||
VIN(1) | ON/OFF input logic 1 | VOUT = ON | 3.5 | V | ||
VHYST | ON/OFF input hysteresis | Peak-to-peak | 0.8 | 2 | V | |
IIN | ON/OFF input pulldown current | VON/OFF = 5 V | 50 | 250 | µA | |
GATE DRIVE OUTPUT | ||||||
VOH | Charge pump output voltage | ON/OFF = 1 | VCC + 7 | VCC + 15 | V | |
VOL | OFF output voltage | ON/OFF = 0, ISINK = 110 µA | 0.9 | V | ||
VCLAMP | Sense to output clamp voltage |
ON/OFF = 1, VSENSE = VTHRESHOLD |
11 | 15 | V | |
ISINK(Normal-OFF) | Output sink current normal operation |
ON/OFF = 0, VDELAY = 0 V, VSENSE = VTHRESHOLD |
75 | 145 | µA | |
ISINK(Latch-OFF) | Output sink current with protection comparator tripped |
VDELAY = 7 V, VSENSE < VTHRESHOLD |
5 | 15 | µA | |
PROTECTION CIRCUITRY | ||||||
VREF | Reference voltage | 1.15 | 1.35 | V | ||
IREF | Threshold pin reference current | VSENSE = VTHRESHOLD | 75 | 88 | µA | |
ITHR(LEAKAGE) | Threshold pin leakage current | VCC = Open, 7 V ≤ VTHRESHOLD ≤ 20 V | 10 | µA | ||
ISENSE | Sense pin input bias current | VSENSE = VTHRESHOLD | 10 | µA | ||
DELAY TIMER | ||||||
VTIMER | Delay timer threshold voltage | 5 | 6.2 | V | ||
VSAT | Discharge transistor saturation voltage | IDIS = 1 mA | 0.4 | V | ||
IDIS | Delay capacitor discharge current | VDELAY = 5 V | 2 | 10 | mA | |
IDELAY | Delay pin source current | 6.74 | 15.44 | µA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
TON | Output turnon time | CLOAD = 0.025 µF | 7V ≤ VCC ≤ 10 V, VOUT ≥ VCC + 7 V | 1.5 | ms | ||
10V ≤ VCC ≤ 20 V, VOUT ≥ VCC + 11 V | 1.5 | ||||||
TOFF(NORMAL) | Output turnoff time, normal operation(2) |
CLOAD = 0.025 µF VCC = 14 V, VOUT ≥ 25 V VSENSE = VTHRESHOLD |
4 | 10 | ms | ||
TOFF(Latch-OFF) | Output turnoff time, protection comparator tripped(2) |
CLOAD = 0.025 µF VCC = 14 V, VOUT ≥ 25 V VSENSE = VTHRESHOLD |
45 | 140 | ms | ||
TDELAY | Delay timer interval | CDELAY = 0.022 µF | 8 | 18 | ms |