SNOSDF9B July 2023 – March 2024 LMG2100R044
PRODUCTION DATA
The LMG2100R044 has an UVLO on both the VCC and HB (bootstrap) supplies. When the VCC voltage is below the threshold voltage of 3.8 V, both the HI and LI inputs are ignored, to prevent the GaN FETs from being partially turned on. Also, if there is insufficient VCC voltage, the UVLO actively pulls the high- and low-side GaN FET gates low. When the HB to HS bootstrap voltage is below the UVLO threshold of 3.2 V, only the high-side GaN FET gate is pulled low. Both UVLO threshold voltages have 200 mV of hysteresis to avoid chattering.
CONDITION (VHB-VHS > VHBR for all cases below) | HI | LI | SW |
---|---|---|---|
VCC - VAGND < VCCR during device start-up | H | L | Hi-Z |
VCC - VAGND < VCCR during device start-up | L | H | Hi-Z |
VCC - VAGND < VCCR during device start-up | H | H | Hi-Z |
VCC - VAGND < VCCR during device start-up | L | L | Hi-Z |
VCC - VAGND < VCCF after device start-up | H | L | Hi-Z |
VCC - VAGND < VCCF after device start-up | L | H | Hi-Z |
VCC - VAGND < VCCF after device start-up | H | H | Hi-Z |
VCC - VAGND < VCCF after device start-up | L | L | Hi-Z |
CONDITION (VCC > VCCR for all cases below) | HI | LI | SW |
---|---|---|---|
VHB-VHS < VHBR during device start-up | H | L | Hi-Z |
VHB-VHS < VHBR during device start-up | L | H | PGND |
VVHB-VHS < VHBR during device start-up | H | H | PGND |
VHB-VHS < VHBR during device start-up | L | L | Hi-Z |
VHB-VHS < VHBF after device start-up | H | L | Hi-Z |
VHB-VHS < VHBF after device start-up | L | H | PGND |
VHB-VHS < VHBF after device start-up | H | H | PGND |
VHB-VHS < VHBF after device start-up | L | L | Hi-Z |