SNOSDA7F September   2020  – August 2024 LMG3422R030 , LMG3426R030 , LMG3427R030

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Switching Characteristics
    7. 5.7 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Switching Parameters
      1. 6.1.1 Turn-On Times
      2. 6.1.2 Turn-Off Times
      3. 6.1.3 Drain-Source Turn-On Slew Rate
      4. 6.1.4 Turn-On and Turn-Off Switching Energy
      5. 6.1.5 Zero-Voltage Detection Times (LMG3426R030 only)
      6. 6.1.6 Zero-Current Detection Times (LMG3427R030 only)
    2. 6.2 Safe Operation Area (SOA)
      1. 6.2.1 Repetitive SOA
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
      1. 7.2.1 LMG3422R030 Functional Block Diagram
      2. 7.2.2 LMG3426R030 Functional Block Diagram
      3. 7.2.3 LMG3427R030 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  GaN FET Operation Definitions
      2. 7.3.2  Direct-Drive GaN Architecture
      3. 7.3.3  Drain-Source Voltage Capability
      4. 7.3.4  Internal Buck-Boost DC-DC Converter
      5. 7.3.5  VDD Bias Supply
      6. 7.3.6  Auxiliary LDO
      7. 7.3.7  Fault Protection
        1. 7.3.7.1 Overcurrent Protection and Short-Circuit Protection
        2. 7.3.7.2 Overtemperature Shutdown Protection
        3. 7.3.7.3 UVLO Protection
        4. 7.3.7.4 High-Impedance RDRV Pin Protection
        5. 7.3.7.5 Fault Reporting
      8. 7.3.8  Drive-Strength Adjustment
      9. 7.3.9  Temperature-Sensing Output
      10. 7.3.10 Ideal-Diode Mode Operation
        1. 7.3.10.1 Overtemperature-Shutdown Ideal-Diode Mode
      11. 7.3.11 Zero-Voltage Detection (ZVD) (LMG3426R030 only)
      12. 7.3.12 Zero-Current Detection (ZCD) (LMG3427R030 only)
    4. 7.4 Start-Up Sequence
    5. 7.5 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Slew Rate Selection
        2. 8.2.2.2 Signal Level-Shifting
        3. 8.2.2.3 Buck-Boost Converter Design
      3. 8.2.3 Application Curves
    3. 8.3 Do's and Don'ts
    4. 8.4 Power Supply Recommendations
      1. 8.4.1 Using an Isolated Power Supply
      2. 8.4.2 Using a Bootstrap Diode
        1. 8.4.2.1 Diode Selection
        2. 8.4.2.2 Managing the Bootstrap Voltage
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
        1. 8.5.1.1 Solder-Joint Reliability
        2. 8.5.1.2 Power-Loop Inductance
        3. 8.5.1.3 Signal-Ground Connection
        4. 8.5.1.4 Bypass Capacitors
        5. 8.5.1.5 Switch-Node Capacitance
        6. 8.5.1.6 Signal Integrity
        7. 8.5.1.7 High-Voltage Spacing
        8. 8.5.1.8 Thermal Recommendations
      2. 8.5.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Export Control Notice
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • RQZ|54
散热焊盘机械数据 (封装 | 引脚)
订购信息

10 Revision History

Changes from Revision E (February 2024) to Revision F (August 2024)

  • Added LMG3427R030 device to the data sheet and set to Production DataGo

Changes from Revision D (March 2022) to Revision E (February 2024)

  • Removed LMG3425R030 device from the data sheet Go
  • Added LMG3426R030 device to the data sheet and set to Production DataGo
  • Removed Switching Performance at >100V/ns graphGo
  • Updated text in Features section.Go
  • Updated text and added table in the Description section. Removed Device Comparison section that was located after the Table of Contents section. Added table contains the information that was in the removed Device Comparison table.Go
  • Added Footnote (1) to the Recommended Operating Conditions section.Go
  • Updated Thermal Information section.Go
  • Changed 50mA to 40mA in the VNEG output voltage specification test condition in the Buck Boost Converter sub-section of the Electrical Characteristics section.Go
  • Changed VRDRV = 0V to RRDRV = 0Ω in the Turn-on slew rate specification third test condition in the Gate Driver sub-section of the Electrical Characteristics section.Go
  • Removed the Short-circuit current to overcurrent fault trip difference specification in the Faults sub-section of the Switching Characteristics section. The specification is redundant since it only reports the typical difference of the first two specifications in the Faults sub-section.Go
  • Added Drain Current vs Drain-Source Voltage and Repetitive Safe Operation graphs in Typical Characteristics section.Go
  • Added the Safe Operation Area (SOA) section.Go
  • Updated text in the Overview section.Go
  • Updated text in the GaN FET Operation Definitions section.Go
  • Updated text in Direct-Drive GaN Architecture section.Go
  • Added sentence clarifying application usage in Drain-Source Voltage Capability sectionGo
  • Updated text and added figures in the Internal Buck-Boost DC-DC Converter section.Go
  • Updated text in the VDD Bias Supply section.Go
  • Updated title and text in the Fault Protection section.Go
  • Updated text and Figure 7-5 in the Overcurrent Protection and Short-Circuit Protection section.Go
  • Updated title in the Overtemperature Shutdown Protection section.Go
  • Updated text in the UVLO Protection section.Go
  • Added the High-Impedance RDRV Pin Protection section.Go
  • Updated text and table, and added table in the Fault Reporting section.Go
  • Updated text and added note in the Drive-Strength Adjustment section.Go
  • Updated text, added equation, and added table in the Temperature-Sensing Output section.Go
  • Updated text in the Overtemperature-Shutdown Ideal-Diode Mode section.Go
  • Added the Start-Up Sequence section.Go
  • Removed Caution and replaced figure with two new figures in Typical Application section.Go
  • Updated text in the Slew Rate Selection section.Go
  • Removed the Startup and Slew Rate with Bootstrap High-Side Supply section.Go
  • Updated text in the Signal Level-Shifting section.Go
  • Updated text and replaced figure with two new figures in Buck-Boost Converter Design section.Go
  • Updated text in the Power Supply Recommendations section.Go
  • Updated text in the Using an Isolated Power Supply section.Go
  • Updated text in the Using a Bootstrap Diode section.Go
  • Added figure in the Layout Guidelines section.Go
  • Updated text and added equation in the Power-Loop Inductance section.Go
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