米6体育平台手机版

SNVS345G June 2006 – December 2014 LP5951

PRODUCTION DATA.

封装选项

机械数据 (封装 | 引脚)

DCK|5
- MPDS025J
DBV|5
- MPDS018T

散热焊盘机械数据 (封装 | 引脚)

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
IN pin: Voltage to GND	–0.3	6.5	V
EN pin: Voltage to GND	–0.3 to (V_IN + 0.3 V)⁽²⁾	6.5	V
Continuous power dissipation⁽³⁾	Internally limited
Junction temperature (T_J-MAX)		150	°C
Package peak reflow temperature (10-20 s)		240
Package peak reflow temperature (Pb-free, 10-20 s)		260
Storage temperature, T_stg	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) The lower of V_IN + 0.3 or 6.5 V.

(3) Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at T_J = 160°C (typ.) and disengages at T_J = 140°C (typ.).

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)⁽¹⁾⁽²⁾

		MIN	MAX	UNIT
V_IN	Input voltage	1.8	5.5	V
V_EN	Enable input voltage	0	(V_IN + 0.3)	V
T_J	Junction temperature	–40	125	°C
T_A	Ambient temperature	See Power Dissipation And Device Operation

(2) All voltages are with respect to the potential at the GND pin.

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		LP5951		UNIT
		SOT-23 (DBV)	SC70 (DCK)
		5 PINS	5 PINS
R_θJA	Junction-to-ambient thermal resistance	195.6	276.7	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	108.3	86.3
R_θJB	Junction-to-board thermal resistance	52.1	56.9
ψ_JT	Junction-to-top characterization parameter	11.0	1.3
ψ_JB	Junction-to-board characterization parameter	51.6	56.1

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

All typical (TYP) values and limits are for T_A = T_J = 25°C, and minimum (MIN) and maximum (MAX) limits apply over the operating junction temperature range (T_J ) of –40°C to 125°C unless otherwise specified in the Test Conditions. Unless otherwise noted, V_IN = V_OUT(NOM) + 1 V, C_IN = 1 µF, C_OUT = 1 µF, V_EN = 0.9 V. ⁽¹⁾⁽²⁾

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_IN	Input voltage	V_IN ≥ V_OUT(NOM) + V_DO	1.8		5.5	V
ΔV_OUT	Output voltage tolerance	I_OUT = 1mA T_J = 25°C	–2%		2%
	Output voltage tolerance	I_OUT = 1mA –30°C ≤ T_J ≤ +125°C	–3.5%		3.5%
	Line regulation error	V_IN = V_OUT(NOM)+ 1 V to 5.5 V I_OUT = 1 mA		0.1		%/V
	Load regulation error	I_OUT = 1 mA to 150 mA		–0.01		%/mA
V_DO	Output voltage dropout⁽³⁾	I_OUT = 150 mA , V_OUT ≥ 2.5 V			250	mV
V_DO	Output voltage dropout⁽³⁾	I_OUT = 150 mA , V_OUT < 2.5 V		200	350	mV
I_Q	Quiescent current	V_EN = 0.9 V, I_LOAD = 0		29	55	µA
		V_EN = 0.9 V, I_LOAD = 150 mA		33	70
		V_EN = 0 V, T_J = 25°C		0.005	1
I_SC	Output current (short circuit)	V_IN = V_OUT(NOM) + 1 V	150	400		mA
PSRR	Power supply rejection ratio	Sine modulated V_IN, ƒ = 100 Hz		60		dB
		Sine modulated V_IN, ƒ = 1 kHz		60
		Sine modulated V_IN, ƒ = 10 kHz		50
E_N	Output noise	BW = 10 Hz - 100 kHz		125		µV_RMS
TSD	Thermal shutdown			160		°C
TSD	Temperature hysteresis			20		°C

(1) All voltages are with respect to the potential at the GND pin.

(2) Minimum and Maximum limits are ensured through test, design, or statistical correlation over the operating junction temperature range (T_J ) of –40°C to 125°C, unless otherwise stated. Typical values represent the most likely parametric norm at T_J = 25°C, and are provided for reference purposes only.

(3) Dropout voltage is defined as the input to output voltage differential at which the output voltage falls to 100 mV below the nominal output voltage. This specification does not apply for output voltages below 1.8 V.

6.6 Enable Control Characteristics

PARAMETER		TEST CONDITIONS	MIN	MAX	UNIT
I_EN	Maximum input current at EN input	0 V ≤ V_EN ≤ V_IN, V_IN = 5.5 V –40°C ≤ T_J ≤ 125°C	–1	1	µA
V_IL	Low input threshold (shutdown)	V_IN = 1.8 V to 5.5 V –40°C ≤ T_J ≤ 125°C		0.4	V
V_IH	High input threshold (enable)	V_IN = 1.8 V to 5.5 V –40°C ≤ T_J ≤ 125°C	0.9		V

6.7 Transient Characteristics

PARAMETER		TEST CONDITIONS	TYP	UNIT
ΔV_OUT	Dynamic line transient	V_IN = V_OUT(NOM) + 1 V to V_OUT(NOM) + 1 V + 0.6 V in 30 µs, no load	±2	mV
ΔV_OUT	Dynamic load transient	I_OUT = 0 mA to 150 mA in 10 µs I_OUT = 150 mA to 0 mA in 10 µs I_OUT = 1 mA to 150 mA in 1 µs I_OUT = 150 mA to 1 mA in 1 µs	-30 20 -50 40	mV mV mV mV
ΔV_OUT	Overshoot on start-up	Nominal conditions	10	mV
T_ON	Turnon time	I_OUT = 1 mA	30	µs

6.8 Output Capacitor, Recommended Specification

PARAMETER		TEST CONDITIONS	MIN⁽¹⁾	TYP	MAX⁽¹⁾	UNIT
C_OUT	Output capacitance	Capacitance⁽²⁾ I_OUT = 150 mA, V_IN = 5 V	0.7	1	47	µF
C_OUT	Output capacitance	ESR	0.003		0.300	Ω

(1) Min and Max limits are ensured by design.

(2) The capacitor tolerance should be 30% or better over temperature. The full operating conditions for the application should be considered when selecting a suitable capacitor to ensure that the minimum value of capacitance is always met. Recommended capacitor type is X7R. However, dependent on application, X5R, Y5V, and Z5U can also be used. The shown minimum limit represents real minimum capacitance, including all tolerances and must be maintained over temperature and dc bias voltage (see External Capacitors in Application and Implementation section).