2 修订历史记录
Changes from November 26, 2015 to September 27, 2018
- Added Section 3.1, Related ProductsGo
- Added typical conditions statements at the beginning of Section 5, SpecificationsGo
- Changed the MIN value of the V(DVCC_BOR_hys) parameter from 60 mV to 50 mV in Section 5.20, PMM, Brownout Reset (BOR)Go
- Updated notes (1) and (2) and added note (3) in Section 5.26, Wake-up Times From Low-Power Modes and ResetGo
- Removed ADC10DIV from the formula for the TYP value in the second row of the tCONVERT parameter in Section 5.36, 10-Bit ADC, Timing Parameters, because ADC10CLK is after divisionGo
- Added second row for tEN_CMP with Test Conditions of "CBPWRMD = 10" and MAX value of 100 µs in Section 5.40, Comparator_BGo
- Renamed FCTL4.MGR0 and MGR1 bits in the fMCLK,MGR parameter in Section 5.41, Flash Memory, to be consistent with header filesGo
- Throughout document, changed all instances of "bootstrap loader" to "bootloader"Go
- 将先前的开发工具支持 部分替换成了Section 7.3,工具与软件Go
- 更新了Section 7.4文档支持 中的相关文档列表Go