4 Revision History
Changes from Revision D (March 2022) to Revision E (August 2023)
- 将 MSOP 封装的所有实例更改为 VSSOP 封装，将 MSOP PowerPAD 的所有实例更改为 HVSSOPGo
- Changed ambient temperature in Recommended Operating Conditions to show only −40°C to +85°CGo
- Changed thermal specifications for DGN package in Thermal Information tableGo
- Changed Electrical Characteristics (EC) to combine both tables in to one table for both packagesGo
- Changed PSRR minimum limit of 316 µV/V to maximum limit in EC table for DGN package.Go
- Changed input offset drift, input voltage noise, small and large signal bandwidth, slew rate, rise and fall time, settling time, output voltage swing, and closed-loop output impedance to show improved valuesGo
- Changed typical and maximum input bias current from 2 µA to 7.9 µA and 6 µA to 14 µA, respectively for DGN package.Go
- Changed input current noise from 0.4 pA/√Hz to 1.7 pA/√Hz in EC table for DGN packageGo
- Changed input impedance spec to show both common-mode and differential impedances in EC table for DGN package.Go
- Changed typical THD+N with differential input/output and RL = 2 kΩ from 0.000022% to 0.000028% in EC table for DGN package.Go
- Changed IMD of differential input/output and RL = 2 kΩ from 0.00005% to 0.000061% in EC table for DGN package.Go
- Changed voltage output swing low and high to a typical only for a load of 2 kΩ in the EC table for DGN package.Go
- Changed the enable and disable voltage threshold from (V−) + 2 V and (V−) 0.8 V to (V−) + 1.45 V and (V−) 1.4 V, respectively, for DGN package.Go
- Changed one Turn-on delay specification to Turn-off delay in Electrical Characteristics tableGo
- Deleted the DGN Typical Characteristics section and combined all
plots into one section.Go
- Changed text in Power Dissipation and Thermal Considerations
section to reference Absolute Maximum Ratings for junction
temperatureGo
Changes from Revision C (September 2015) to Revision D (March 2022)
- 更新了整个文档中的表格、图和交叉参考的编号格式Go
- 将“特性”部分中的失真规格从 0.000022% 更改为 0.000028%Go
- 将“特性”部分中的噪声规格从 1.3nV/√Hz 更改为 1.25nV/√Hz
Go
- 将“特性”部分中的压摆率规格从 50V/μs 更改为 72V/μsGo
- 更新了特性 部分Go
- 更新了应用 部分Go
- 更新了说明 部分Go
- 更改了说明 部分中 SOIC 和 MSOP-PowerPAD 封装的标称封装尺寸Go
- Added note on electrical isolation of DGN package thermal
pad.Go
- Updated Pin Configuration and Functions
sectionGo
- Added Supply turn-on/off dV/dT specification to Absolute Maximum Ratings tableGo
- Added continuous input current specification to Absolute Maximum Ratings tableGo
- Changed differential input voltage in Absolute Maximum Ratings table from ±3V to ±1.5V Go
- Changed charged-device model (CDM) reference from JESD22-C101 to JS-002 in ESD Ratings tableGo
- Changed minimum temperature range from 0.4℃ to -40℃ in Recommended Operating Conditions tableGo
- Changedthermal specifications for D package in Thermal Information tableGo
- Changed RθJA from 114.5°C/W to 126.3°C/W for D Package in Thermal Information tableGo
- Changed RθJC(top) from 60.3°C/W to 67.3°C/W for D package in Thermal Information tableGo
- Changed RθJB from 54.8°C/W to 69.8°C/W for D package in Thermal Information tableGo
- Changed ψJT from 14°C/W to 19.5°C/W for D package in Thermal Information tableGo
- Changed ψJT from 54.3°C/W to 69.0°C/W for D package in Thermal Information tableGo
- Changed typical offset voltage vs temperature from ±5 μV°C to ± 2.5 μV°C in Electrical Characteristics: OPA1632D tableGo
- Changed PSRR minimum limit of 316 µV/V to maximum limit in Electrical Characteristics: OPA1632D table
Go
- Changed typical input bias current limit from 2 µA to 7.9 µA in Electrical Characteristics: OPA1632D tableGo
- Changed Max input bias current limit from 6µA to 14µA in Electrical Characteristics: OPA1632D tableGo
- Changed typical input voltage noise from 1.3nV/√Hz to 1.25nV/√Hz in Electrical Characteristics: OPA1632D tableGo
- Changed typical input current noise from 0.4 pA/√Hz to 1.7 pA/√Hz in Electrical Characteristics: OPA1632D tableGo
- Changed input impedance spec to show both common-mode and differential impedances in Electrical Characteristics: OPA1632D tableGo
- Changed SSBW at G = +2, RF = 602 Ω from 90 MHz to 104 MHz in Electrical Characteristics: OPA1632D tableGo
- Changed SSBW at G = +5, RF = 1.5 kΩ from 36 MHz to 46 MHz in Electrical Characteristics: OPA1632D tableGo
- Changed SSBW at G = +10, RF = 3.01 kΩ from 18 MHz to 24 MHz in Electrical Characteristics: OPA1632D tableGo
- Changed typical Large-Signal Bandwidth from 800 kHz to 1.8 MHz in Electrical Characteristics: OPA1632D tableGo
- Changed typical slew rate from 50 V/μs to 72 V/μs in Electrical Characteristics: OPA1632D table Go
- Changed typical rise/fall time from 100 ns to 69 ns in Electrical Characteristics: OPA1632D tableGo
- Changed typical settling time to 0.1% from 75 ns to 36 ns in Electrical Characteristics: OPA1632D tableGo
- Changed typical settling time to 0.01% from 200 ns to 49ns in Electrical Characteristics: OPA1632D table Go
- Changed typical THD+N with Differential Input/Output and RL = 600 Ω from 0.0003% to 0.00003% in Electrical Characteristics: OPA1632D tableGo
- Changed typical THD+N with Differential Input/Output and RL = 2 kΩ from 0.000022% to 0.000028% in Electrical Characteristics: OPA1632D table Go
- Changed typical THD+N with single-ended Input/Output and RL = 600Ω from 0.000059% to 0.000036% in Electrical Characteristics: OPA1632D table Go
- Changed typical THD+N with single-ended Input/Output and RL = 2 kΩ from 0.000043% to 0.000031% in Electrical Characteristics: OPA1632D tableGo
- Changed IMD at diferrential input/output and RL= 600Ω from 0.00008% to 0.000061% in Electrical Characteristics: OPA1632D tableGo
- Changed IMD at diferrential input/output and RL= 2 kΩ from 0.00005% to 0.000061% in Electrical Characteristics: OPA1632D table Go
- Changed IMD at single-ended input/output and RL= 600Ω from 0.0001% to 0.00007% in Electrical Characteristics: OPA1632D table Go
- Changed IMD at single-ended input/output and RL= 2kΩ from 0.0007% to 0.000073% in Electrical Characteristics: OPA1632D table Go
- Removed specified operating voltage specifications from Electrical Characteristics: OPA1632D table Go
- Changed typical IQ from 14mA to 13mA in Electrical Characteristics: OPA1632D tableGo
- Added new Typical Characteristics section for D
packageGo
- Updated Feature Description sectionGo
- Changed description of VOCM pin circuitry in Output
Common-mode Voltage and Resistor Matching
sectionsGo
- Updated Output Common-Mode Voltage sectionGo
- Updated Resistor Matching sectionGo
- Updated Application Curves sectionGo
- Changed instances of VCC and VEE to
V+ and V- in Power Supply Recommendations
sectionGo
- Updated Power Supply Recommendations sectionGo
- Changed maximum power dissipation vs ambient temperature
curveGo
- Updated the Power Dissipation and Thermal Considerations
sectionGo
- Added schematic for example layout in Layout Example
sectionGo
- Changed image for example layout in Layout Example
sectionGo
- Updated Layout Example sectionGo
- Changed list of documentation in Related Documentation
sectionGo
Changes from Revision B (January 2010) to Revision C (September 2015)
- 添加了 ESD 等级 表、特性说明 部分、器件功能模式、应用和实施 部分、电源相关建议 部分、布局 部分、器件和文档支持 部分以及机械、封装和可订购信息 部分Go