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SBOS197F December 2001 – August 2015 OPA657

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

D|8
- MSOI002K
DBV|5
- MPDS018T

散热焊盘机械数据 (封装 | 引脚)

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7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

	MIN	MAX	UNIT
Supply voltage (Total Bipolar Supplies)		±6.5	V
Internal power dissipation	See Thermal Information
Differential input voltage	–V_S	+V_S	V
Input voltage	–V_S	+V_S	V
Junction temperature (T_J)		175	°C
Storage temperature	–65	125	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	±2000	V
		Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	±500
		Machine Model (MM)	±200

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	NOM	MAX	UNIT
V_S	Total supply voltage	8	10	12	V
T_A	Ambient temperature	–40	25	85	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		OPA657		UNIT
		D (SOIC)	DBV (SOT-23)
		8 PINS	5 PINS
R_θJA	Junction-to-ambient thermal resistance	125	150	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	85.2	140.8	°C/W
R_θJB	Junction-to-board thermal resistance	75.9	62.8	°C/W
ψ_JT	Junction-to-top characterization parameter	26.2	24.4	°C/W
ψ_JB	Junction-to-board characterization parameter	75.4	61.8	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	—	—	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics: V_S = ±5 V

At R_F = +453 Ω, R_L = +100 Ω, and G = +10 V/V, unless otherwise noted. See Figure 29 for AC performance.

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT	TEST LEVEL⁽¹⁾
AC PERFORMANCE (see Figure 29)
Small-signal bandwidth		G = +7 V/V, V_O = 200 mV_PP	T_J = 25°C		350		MHz	C
		G = +10 V/V, V_O = 200 mV_PP	T_J = 25°C		275
		G = +20 V/V, V_O = 200 mV_PP	T_J = 25°C		90
Gain-bandwidth product		G > +40 V/V	T_J = 25°C		1600		dB	C
Bandwidth for 0.1dB Flatness		G = +10 V/V, 2 V_PP	T_J = 25°C		30		MHz	C
Peaking at a Gain of +7			T_J = 25°C		7		dB	C
Large-Signal Bandwidth		G = +10 V/V, 2 V_PP	T_J = 25°C		180		MHz	C
Slew Rate		G = +10 V/V, 1-V Step	T_J = 25°C		700		V/μs	C
Rise-and-Fall Time		0.2-V Step	T_J = 25°C		1		ns	C
Settling Time to 0.02%		G = +10 V/V, V_O = 2-V Step	T_J = 25°C		20		ns	C
Harmonic Distortion		G = +10 V/V, f = 5 MHz, V_O = 2 V_PP						C
	2nd-Harmonic	R_L = 200 Ω	T_J = 25°C		–70		dBc	C
	2nd-Harmonic	R_L > 500 Ω	T_J = 25°C		–74		dBc	C
	3rd-Harmonic	R_L = 200 Ω	T_J = 25°C		–99		dBc	C
	3rd-Harmonic	R_L > 500 Ω	T_J = 25°C		–106		dBc	C
Input Voltage Noise		f > 100 kHz	T_J = 25°C		4.8		nV/√Hz	C
Input Current Noise		f > 100 kHz	T_J = 25°C		1.3		fA/√Hz	C
DC PERFORMANCE⁽²⁾
Open-Loop Voltage Gain (A_OL)		V_CM = 0 V, R_L = 100 Ω	T_J = 25°C	65	70		dB	A
			T_J = 0°C to 70°C⁽³⁾	64
			T_J = –40°C to 85°C⁽³⁾	63
Input Offset Voltage		V_CM = 0 V	T_J = 25°C		±0.25	±1.8	mV	A
			T_J = 0°C to 70°C⁽³⁾			±2.2
			T_J = –40°C to 85°C⁽³⁾			±2.6
	Average Offset Voltage Drift	V_CM = 0 V	T_J = 25°C	±12	±2		μV/°C	A
			T_J = 0°C to 70°C⁽³⁾	±12
			T_J = –40°C to 85°C⁽³⁾	±12
Input Bias Current		V_CM = 0 V	T_J = 25°C		±2	±20	pA	A
			T_J = 0°C to 70°C⁽³⁾			±1800
			T_J = –40°C to 85°C⁽³⁾			±5000
Input Offset Current		V_CM = 0 V	T_J = 25°C		±1	±10	pA	A
			T_J = 0°C to 70°C⁽³⁾			±900
			T_J = –40°C to 85°C⁽³⁾			±2500
INPUT
Most Positive Input Voltage⁽³⁾			T_J = 25°C	2	2.5		V	A
			T_J = 0°C to 70°C⁽³⁾	1.9
			T_J = –40°C to 85°C⁽³⁾	1.8
Most Negative Input Voltage⁽³⁾			T_J = 25°C	–3.5	–4		V	A
			T_J = 0°C to 70°C⁽³⁾	–3.4
			T_J = –40°C to 85°C⁽³⁾	–3.3
Common-Mode Rejection Ratio (CMRR)		V_CM = ±0.5 V	T_J = 25°C	83	89		dB	A
			T_J = 0°C to 70°C⁽³⁾	81
			T_J = –40°C to 85°C⁽³⁾	79
Input Impendance
	Differential		T_J = 25°C		10¹² \|\| 0.7		Ω \|\| pF	C
	Common-Mode		T_J = 25°C		10¹² \|\| 4.5		Ω \|\| pF	C
OUTPUT
Voltage Output Swing		No load	T_J = 25°C		±3.9		V	A
		No load	T_J = 0°C to 70°C⁽³⁾		±3.7		V	A
		R_L = 100 Ω	T_J = 25°C	±3.3	±3.5		V	B
			T_J = 0°C to 70°C⁽³⁾	±3.2
			T_J = –40°C to 85°C⁽³⁾	±3.1
Current Output, Sourcing			T_J = 25°C	50	70		mA	A
			T_J = 0°C to 70°C⁽³⁾	48
			T_J = –40°C to 85°C⁽³⁾	46
Current Output, Sinking			T_J = 25°C	–50	–70		mA	A
			T_J = 0°C to 70°C⁽³⁾	–48
			T_J = –40°C to 85°C⁽³⁾	–46
Closed-Loop Output Impedance		G = +10 V/V, f = 0.1 MHz	T_J = 25°C		0.02		Ω	A
POWER SUPPLY
Specified Operating Voltage			T_J = 25°C		±5		V	A
Minimum Operating Voltage			T_J = 25°C		±4		V	C
Maximum Operating Voltage Range			T_J = 25°C			±6	V	A
			T_J = 0°C to 70°C⁽³⁾			±6
			T_J = –40°C to 85°C⁽³⁾			±6
Maximum Quiescent Current			T_J = 25°C		14	16	mA	A
			T_J = 0°C to 70°C⁽³⁾			16.2
			T_J = –40°C to 85°C⁽³⁾			16.3
Minimum Quiescent Current			T_J = 25°C	11.7	14		mA	A
			T_J = 0°C to 70°C⁽³⁾	11.4
			T_J = –40°C to 85°C⁽³⁾	11.1
Power-Supply Rejection Ratio (+PSRR)		+VS = 4.5 V to 5.5 V	T_J = 25°C	76	80		dB	A
			T_J = 0°C to 70°C⁽³⁾	74
			T_J = –40°C to 85°C⁽³⁾	72
Power-Supply Rejection Ratio (–PSRR)		–VS = 4.5 V to 5.5 V	T_J = 25°C	62	68		dB	A
			T_J = 0°C to 70°C⁽³⁾	60
			T_J = –40°C to 85°C⁽³⁾	58
TEMPERATURE RANGE
Specified Operating Range: U, N Package			T_J = 25°C		–40 to +85		°C
Thermal Resistance, R_θJA		Junction-to-Ambient
U: SO-8			T_J = 25°C		125		°C/W
N: SOT23-5			T_J = 25°C		150		°C/W

(1) Test Levels: (A) 100% tested at +25°C. Over-temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information.

(2) Current is considered positive out-of-node. V_CM is the input common-mode voltage.

(3) Tested < 3dB below minimum specified CMRR at ±CMIR limits.

7.6 Electrical Characteristics: V_S - ±5 V, High-Grade DC Specifications

At R_F = 453 Ω, R_L = 100 Ω, and G = +10 V/V, unless otherwise noted. ⁽¹⁾

PARAMETER	TEST CONDITIONS		MIN	TYP	MAX	UNIT	TEST LEVEL⁽⁴⁾
Input Offset Voltage	V_CM = 0 V	T_J = 25°C		±0.1	±0.6⁽²⁾	mV	A
		T_J = 0°C to 70°C⁽³⁾			±0.85
		T_J = –40°C to 85°C⁽³⁾			±0.9
Input Offset Voltage Drift	V_CM = 0 V	T_J = 25°C		±2	±6⁽²⁾	μV/°C	A
		T_J = 0°C to 70°C⁽³⁾			±6
		T_J = –40°C to 85°C⁽³⁾			±6
Input Bias Current	V_CM = 0 V	T_J = 25°C		±1	±5⁽²⁾	pA	A
		T_J = 0°C to 70°C⁽³⁾			±450
		T_J = –40°C to 85°C⁽³⁾			±1250
Input Offset Current	V_CM = 0 V	T_J = 25°C		±0.5	±5⁽²⁾	pA	A
		T_J = 0°C to 70°C⁽³⁾			±450
		T_J = –40°C to 85°C⁽³⁾			±1250
Common-Mode Rejection Ratio (CMRR)	V_CM = ±0.5 V	T_J = 25°C	91⁽²⁾	98		dB	A
		T_J = 0°C to 70°C⁽³⁾	89
		T_J = –40°C to 85°C⁽³⁾	87
Power-Supply Rejection Ratio (+PSRR)	+V_S = 4.5 V to 5.5 V	T_J = 25°C	78⁽²⁾	82		dB	A
		T_J = 0°C to 70°C⁽³⁾	76
		T_J = –40°C to 85°C⁽³⁾	74
Power-Supply Rejection Ratio (–PSRR)	–V_S = –4.5 V to –5.5 V	T_J = 25°C	68⁽²⁾	74		dB	A
		T_J = 0°C to 70°C⁽³⁾	66
		T_J = –40°C to 85°C⁽³⁾	64

(1) All other specifications are the same as the standard-grade.

(2) Junction temperature = ambient for +25°C specifications.

(3) Junction temperature = ambient at low temperature limit: junction temperature = ambient +20°C at high temperature limit for over temperature specifications.

(4) Test Levels: (A) 100% tested at +25°C. Over temperature limits by characterization and simulation.