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SCDS143C October 2003 – June 2015 SN74CB3Q3125

PRODUCTION DATA.

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)

DBQ|16
RGY|14
DGV|14
PW|14

散热焊盘机械数据 (封装 | 引脚)

RGY|14
- QFND039P

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage		–0.5	4.6	V
V_IN	Control input voltage⁽²⁾⁽³⁾		–0.5	7	V
V_I/O	Switch I/O voltage⁽²⁾⁽³⁾⁽⁴⁾		–0.5	7	V
I_I/K	Control input clamp current	V_IN < 0		–50	mA
I_I/OK	I/O port clamp current	V_I/O < 0		–50	mA
I_IO	ON-state switch current⁽⁵⁾			±64	mA
	Continuous current through V_CC or GND			±100	mA
T_J	Junction temperature			150	°C
T_stg	Storage temperature		–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltages are with respect to ground, unless otherwise specified.

(3) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.

(4) V_I and V_O are used to denote specific conditions for V_I/O.

(5) I_I and I_O are used to denote specific conditions for I_I/O.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾	+2000	V
V_(ESD)	Electrostatic discharge	Charged-device model (CDM), per JEDEC specification JESD22-C101⁽²⁾	+1000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

			MIN	MAX	UNIT
V_CC	Supply voltage		2.3	3.6	V
V_IH	High-level control input voltage	V_CC = 2.3 V to 2.7 V	1.7	5.5	V
V_IH	High-level control input voltage	V_CC = 2.7 V to 3.6 V	2	5.5	V
V_IL	Low-level control input voltage	V_CC = 2.3 V to 2.7 V	0	0.7	V
V_IL	Low-level control input voltage	V_CC = 2.7 V to 3.6 V	0	0.8	V
V_I/O	Data input and output voltage		0	5.5	V
T_A	Operating free-air temperature		–40	85	°C

(1) All unused control inputs of the device must be held at V_CC or GND to ensure proper device operation. Refer to the TI application report, Implications of Slow or Floating CMOS Inputs (SCBA004).

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		SN74CB3Q3257				UNIT
		DBQ (SSOP)	DGV (TVSOP)	PW (TSSOP)	RGY (VQFN)
		16 PINS	14 PINS	14 PINS	14 PINS
R_θJA	Junction-to-ambient thermal resistance	90	127	113	47	°C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over recommended operating free-air temperature range (unless otherwise noted)⁽¹⁾

PARAMETER		TEST CONDITIONS			TYP⁽²⁾	MAX	UNIT
V_IK		V_CC = 3.6 V,	I_I = –18 mA			–1.8	V
I_IN	Control inputs	V_CC = 3.6 V,	V_IN= 0 to 5.5 V			±1	µA
I_OZ⁽³⁾		V_CC = 3.6 V,	V_O= 0 to 5.5 V, V_I = 0,	Switch OFF, V_IN = V_CC or GND		±1	µA
I_off		V_CC = 0,	V_O= 0 to 5.5 V,	V_I = 0		1	µA
I_CC		V_CC = 3.6 V,	I_I/O = 0, Switch ON or OFF,	V_IN = V_CC or GND	0.3	1	mA
ΔI_CC⁽⁴⁾	Control inputs	V_CC = 3.6 V,	One input at 3 V,	Other inputs at V_CC or GND		30	µA
I_CCD⁽⁵⁾	Per control input	V_CC = 3.6 V,	A and B ports open,		0.04	0.2	mA/ MHz
I_CCD⁽⁵⁾	Per control input	Control input switching at 50% duty cycle			0.04	0.2	mA/ MHz
C_in	Control inputs	V_CC = 3.3 V,	V_IN = 5.5 V, 3.3 V, or 0		2.5	3.5	pF
C_io(OFF)		V_CC = 3.3 V,	Switch OFF, V_IN = V_CC or GND,	V_I/O = 5.5 V, 3.3 V, or 0	4	5	pF
C_io(ON)		V_CC = 3.3 V,	Switch ON, V_IN = V_CC or GND,	V_I/O = 5.5 V, 3.3 V, or 0	8	10	pF
r_on⁽⁶⁾		V_CC = 2.3 V, TYP at V_CC = 2.5 V	V_I= 0,	I_O = 30 mA	4	8	Ω
		V_CC = 2.3 V, TYP at V_CC = 2.5 V	V_I= 1.7 V,	I_O = –15 mA	4	9
		V_CC = 3 V	V_I= 0,	I_O = 30 mA	4	6
		V_CC = 3 V	V_I= 2.4 V,	I_O = –15 mA	4	8

(1) V_IN and I_IN refer to control inputs. V_I, V_O, I_I, and I_O refer to data pins.

(2) All typical values are at V_CC = 3.3 V (unless otherwise noted), T_A = 25°C.

(3) For I/O ports, the parameter I_OZ includes the input leakage current.

(4) This is the increase in supply current for each input that is at the specified TTL voltage level, rather than V_CC or GND.

(5) This parameter specifies the dynamic power-supply current associated with the operating frequency of a single control input (see Figure 2).

(6) Measured by the voltage drop between the A and B terminals at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages of the two (A or B) terminals.

6.6 Switching Characteristics

over recommended operating free-air temperature range (unless otherwise noted) (see Figure 3)

PARAMETER	FROM (INPUT)	TO (OUTPUT)	V_CC = 2.5 V ± 0.2 V		V_CC = 3.3 V ± 0.3 V		UNIT
PARAMETER	FROM (INPUT)	TO (OUTPUT)	MIN	MAX	MIN	MAX	UNIT
f_OE⁽¹⁾	OE	A or B		10		20	MHz
t_pd⁽²⁾	A or B	B or A		0.12		0.2	ns
t_en	OE	A or B	1.5	6.7	1.5	6.6	ns
t_dis	OE	A or B	1	4.6	1	5.3	ns

(1) Maximum switching frequency for control input (V_O > V_CC, V_I = 5 V, R_L ≥ 1 MΩ, C_L = 0)

(2) The propagation delay is the calculated RC time constant of the typical ON-state resistance of the switch and the specified load capacitance, when driven by an ideal voltage source (zero output impedance).

6.7 Typical Characteristics

At T_A = 25°C and V_CC = 3.3 V, unless otherwise noted.

I_O = –15 mA

Figure 1. Typical On-State Resistance vs Input Voltage

A and B Ports Open

Figure 2. Typical Supply Current vs OE Switching Frequency