ZHCSNG7D August   2020  – December 2021 SN74HCS165-Q1

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     4
    2.     5
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced CMOS Push-Pull Outputs
      2. 8.3.2 CMOS Schmitt-Trigger Inputs
      3. 8.3.3 Clamp Diode Structure
      4. 8.3.4 Latching Logic
      5. 8.3.5 Wettable Flanks
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
        1. 9.2.1.1 Power Considerations
        2. 9.2.1.2 Input Considerations
        3. 9.2.1.3 Output Considerations
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6.5 Electrical Characteristics

over operating free-air temperature range; typical values measured at TA = 25°C (unless otherwise noted).
PARAMETER TEST CONDITIONS VCC MIN TYP MAX UNIT
VT+ Positive switching threshold 2 V 0.7 1.5 V
4.5 V 1.7 3.15
6 V 2.1 4.2
VT- Negative switching threshold 2 V 0.3 1.0 V
4.5 V 0.9 2.2
6 V 1.2 3.0
ΔVT Hysteresis (VT+ - VT-)(1) 2 V 0.2 1.0 V
4.5 V 0.4 1.4
6 V 0.6 1.6
VOH High-level output voltage VI = VIH or VIL IOH = -20 µA 2 V to 6 V VCC – 0.1 VCC – 0.002 V
IOH = -6 mA 4.5 V 4.0 4.3
IOH = -7.8 mA 6 V 5.4 5.75
VOL Low-level output voltage VI = VIH or VIL IOL = 20 µA 2 V to 6 V 0.002 0.1 V
IOL = 6 mA 4.5 V 0.18 0.30
IOL = 7.8 mA 6 V 0.22 0.33
II Input leakage current VI = VCC or 0 6 V ±100 ±1000 nA
ICC Supply current VI = VCC or 0, IO = 0 6 V 0.1 2 µA
Ci Input capacitance 2 V to 6 V 5 pF
(1) Guaranteed by design.
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