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SLVSC77D August 2013 – April 2016 TPD2E1B06

PRODUCTION DATA.

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机械数据 (封装 | 引脚)

DRL|6
- MPDS159H

散热焊盘机械数据 (封装 | 引脚)

订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
	Operating temperature	–40	125	°C
I_PP	Peak pulse current (tp = 8/20 μs)⁽²⁾		2.5	A
P_PP	Peak pulse power (tp = 8/20 μs)⁽²⁾		35	W
T_stg	Storage temperature	–65	155	°C

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Using Routing Option 1 or 2 as shown in Figure 13 or Figure 14.

6.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	IEC 61000-4-2 contact discharge⁽²⁾	±10000	V
V_(ESD)	Electrostatic discharge	IEC 61000-4-2 air-gap discharge⁽²⁾	±15000	V

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IO	Pin IOA1 to IOA2; Pin IOB1 to IOB2	–5.5	5.5	V
T_A	Operating free-air temperature	–40	125	°C

6.4 Thermal Information

over operating free-air temperature range (unless otherwise noted)

THERMAL METRIC⁽¹⁾		TPD2E1B06	UNIT
		DRL (SOT)
		6 PINS
R_θJA	Junction-to-ambient thermal resistance	349.7	ºC/W
R_θJC(top)	Junction-to-case (top) thermal resistance	120.5	ºC/W
Rθ_θJB	Junction-to-board thermal resistance	171.4	ºC/W
ψ_JT	Junction-to-top characterization parameter	10.8	ºC/W
ψ_JB	Junction-to-board characterization parameter	169.4	ºC/W

(1) For more information about traditional and new thermal metrics, the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range. (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
V_RWM	Reverse standoff voltage				5.5	V
V_CLAMP	Clamp voltage with ESD strike	I_PP = 1 A, TLP, I/O to GND⁽¹⁾⁽²⁾		11		V
V_CLAMP	Clamp voltage with ESD strike	I_PP = 5 A, TLP, I/O to GND⁽¹⁾⁽²⁾		15		V
V_CLAMP	Clamp voltage with ESD strike	I_PP = 1 A, TLP, GND to I/O ⁽¹⁾⁽²⁾		11		V
V_CLAMP	Clamp voltage with ESD strike	I_PP = 5 A, TLP, GND to I/O ⁽¹⁾⁽²⁾		15		V
R_DYN	Dynamic resistance			0.9		Ω
C_L1	Pin 2 and 5 capacitance	Pin 1 and 4 = GND, f = 1 MHz, V_BIAS = 2.5 V⁽²⁾⁽³⁾		0.85		pF
C_L2	Pin 1 and 4 capacitance	Pin 2 and 5 = GND, f = 1 MHz, V_BIAS = 2.5 V⁽²⁾⁽⁴⁾		1.05		pF
V_BR	Break-down voltage	I_IO = 1 mA	7		9.5	V
I_LEAK	Leakage current	V_BIAS = +2.5 V		1	10	nA