ZHCSCF2B July   2013  – April 2014 TPD4E110

PRODUCTION DATA.  

  1. 特性
  2. 应用范围
  3. 说明
  4. 简化电路原理图
  5. 修订历史记录
  6. Terminal Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. Applications and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Signal range on Terminal 1, 2, 3, or 4
        2. 9.2.2.2 Operating Frequency
      3. 9.2.3 Application Curves
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
      1. 10.2.1 Single Layer Routing
      2. 10.2.2 Double Layer Routing
  11. 11器件和文档支持
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 Glossary
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8 Detailed Description

8.1 Overview

TPD4E110DPW is a uni-directional ESD protection device with ultra-low capacitance. The device is constructed with a central ESD clamp that features two hiding diodes per channel to reduce the capacitive loading. Each channel is rated to dissipate ESD strikes above the maximum level specified in the IEC61000-4-2 level 4 international standard. The TPD4E110DPW's ultra-low loading capacitance makes the device ideal for protecting high-speed signal terminals. The 0.8 mm x 0.8 mm package is designed for space saving designs. The pinout allows for straight through routing of 2 differential pairs when PCB manufacturing which feature sizes of 2.8 mils (0.071 mm).

8.2 Functional Block Diagram

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8.3 Feature Description

TPD4E110 is a uni-directional Electrostatic Discharge (ESD) protection device with ultra-low capacitance. The device is constructed with a central ESD clamp that features two hiding diodes per line to reduce the capacitive loading. Each line is rated to dissipate ESD strikes above the maximum level specified in the IEC61000-4-2 level 4 international standard. The TPD4E110's ultra-low loading capacitance makes it ideal for protecting high-speed signal terminals.

8.4 Device Functional Modes

TPD4E110 is a passive integrated circuit that activates whenever voltages above VBR or below the lower diodes Vforward (–0.6V) are present upon the circuit being protected. During ESD events, voltages as high as ±15 kV can be directed to ground via the internal diode network. Once the voltages on the protected line fall below the trigger levels of TPD4E110 (usually within 10’s of nano-seconds) the device reverts to passive.