ZHCS116G May   2011  – December 2015 TPD4S014

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用范围
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics, EN, ACK, D+, D-, ID Pins
    6. 6.6 Electrical Characteristics OVP Circuits
    7. 6.7 Supply Current Consumption
    8. 6.8 Thermal Shutdown Feature
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Input Voltage Protection at VBUS up to 28 V DC
      2. 7.3.2 Low RON nFET Switch
      3. 7.3.3 ESD Performance D+/D-/ID/VBUS Pins
      4. 7.3.4 Overvoltage and Undervoltage Lockout Features
      5. 7.3.5 Capacitance TVS ESD Clamp for USB2.0 Hi-Speed Data Rate
      6. 7.3.6 Start-up Delay
      7. 7.3.7 OVP Glitch Immunity
      8. 7.3.8 Integrated Input Enable and Status Output Signal
      9. 7.3.9 Thermal Shutdown
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 For Non-OTG USB Systems
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 For OTG USB Systems
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 社区资源
    2. 11.2 商标
    3. 11.3 静电放电警告
    4. 11.4 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Maximum junction temperature –40 150 °C
Max Voltage on VBUS –0.5 30 V
Continuous current through nFET 2.6 A
Continuous current through ACK –50 50 mA
Max Current through D+, D–, ID, VBUS ESD clamps 50 mA
Max voltage on EN, ACK, D+, D-, ID, VBUSOUT 6 V
Storage temperature, Tstg –65 150 °C
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
IEC 61000-4-2 Contact Discharge D+, D–, ID, VBUS pins ±1500
IEC 61000-4-2 Air-gap Discharge D+, D–, ID, VBUS pins ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 500-V HBM is possible with the necessary precautions. Pins listed as ±2000 V may actually have higher performance.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process. Manufacturing with less than 250-V CDM is possible with the necessary precautions. Pins listed as ±1000 V may actually have higher performance.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
TA Operating free-air temperature –40 85 °C
VI Input voltage VBUSOUT –0.1 5.5 V
VBUS –0.1 5.5
EN –0.1 5.5
ACK –0.1 5.5
D+, D-, ID, –0.1 5.5
IVBUS VBUS continuous current(1) VBUSOUT 2.0 A
CVBUS Capacitance on VBUS VBUS Pin 10 µF
CVBUSOUT Capacitance on VBUSOUT VBUSOUT Pin 10 µF
RACK Pullup resistor on ACK ACK Pin 10 kΩ
(1) IVBUS Max value is dependent on ambient temperature. See Thermal Shutdown section.

6.4 Thermal Information

THERMAL METRIC(1) TPD4S014 UNIT
DSQ (WSON)
8 PINS
RθJA Junction-to-ambient thermal resistance 70.3 °C/W
RθJCtop Junction-to-case (top) thermal resistance 46.3 °C/W
RθJB Junction-to-board thermal resistance 33.8 °C/W
ψJT Junction-to-top characterization parameter 2.9 °C/W
ψJB Junction-to-board characterization parameter 33.5 °C/W
RθJCbot Junction-to-case (bottom) thermal resistance 16.3 °C/W
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics, EN, ACK, D+, D–, ID Pins

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIH High-level input voltage EN Load current = 50 µA 1 V
VIL Low-level input voltage EN Load current = 50 µA 0.5 V
ILEAK Input Leakage Current EN, D+, D–, ID VIO = 3.3 V 1 µA
VOL Low-level output voltage ACK IOL = 2 mA 0.1 V
VD Diode forward Voltage D+, D–, ID pins; lower clamp diode IO = 8 mA 0.95 V
ΔCIO Differential Capacitance between the D+, D– lines 0.03 pF
CIO Capacitance to GND for the D+, D– lines ƒ = 1 MHz 1.6 pF
CIO-ID Capacitance to GND for the ID line 19 pF
VR Reverse stand-off voltage of D+, D- and ID pins 5 V
VBR Breakdown voltage D+, D–, ID pins IBR = 1 mA 6 V
VBR VBUS Breakdown voltage on VBUS IBR = 1 mA 28 V
RDYN Dynamic on resistance D+, D–, ID clamps II = 1 A 1 Ω

6.6 Electrical Characteristics OVP Circuits

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
INPUT UNDERVOLTAGE LOCKOUT
VUVLO+ Under-voltage lock-out, input power detected threshold rising VBUS increasing from 0 V to 5 V, No load on OUT pin 2.65 2.8 3 V
VUVLO– Under-voltage lock-out, input power detected threshold falling VBUS decreasing from 5 V to 0 V, No load on OUT pin 2.25 2.44 2.7 V
VHYS-UVLO Hysteresis on UVLO Δ of VUVLO+ and VUVLO– 150 360 550 mV
INPUT TO OUTPUT CHARACTERISTICS
RDS_VBUSSWITCH VBUS switch resistance VBUS = 5 V, IOUT = 500 mA 151 200 mΩ
tON Turn-ON time VBUS increasing from 2.8 V to 4.75 V, EN = 0 V, RL = 36 Ω, CL = 10 uF 16 17.4 22 ms
tOFF Turn-OFF time VBUS decreasing from 2.44 V to 0.5 V, EN = 0V, RL = 36 Ω, CL = 10 uF 8 µs
INPUT OVERVOLTAGE PROTECTION (OVP)
VOVP+ Input over –voltage protection threshold rising VBUS VBUS increasing from 5 V to 7 V, No Load 5.9 6.15 6.45 V
VOVP- Input over –voltage protection threshold falling VBUS VBUS decreasing from 7 V to 5 V, No Load 5.75 5.98 6.24 V
VHYS-OVP Hysteresis on OVP VBUS Δ of VOVP+ and VOVP– 25 100 275 mV
td(OVP) Over voltage delay VBUS RL = 36 Ω, CL = 10 µF; VBUS increasing from 5 V to 7 V 11 µs
tREC Recovery time from input over voltage condition VBUS RL = 36 Ω, CL = 10 µF; VBUS decreasing from 7 V to 5 V 8 10.5 ms

6.7 Supply Current Consumption

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IVBUS VBUS Operating Current Consumption No load on VBUS_OUT pin, VBUS = 5 V,
EN = 0 V		 147.6 160 µA
IVBUS_OFF VBUS Operating Current Consumption No load on VBUS_OUT pin, VBUS = 5 V,
EN = 5 V		 111.8 120 µA

6.8 Thermal Shutdown Feature

over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TSHDN Thermal Shutdown 144 °C
TSHDN-HYS Thermal-Shutdown Hysteresis 23 °C

6.9 Typical Characteristics

TPD4S014 typ_char1_lvsau0.png Figure 1. IEC61000-4-2 -8-kV Contact Waveform
TPD4S014 typ_char3_lvsau0.png
Figure 3. Capacitance Variation With Voltage
TPD4S014 typ_char5_lvsau0.png
Figure 5. Max Pulse Current Through Switch vs Pulse Duration
TPD4S014 typ_char7_lvsau0.png
Figure 7. OVP Threshold Variation With Temperature
TPD4S014 typ_char9_lvsau0.png
.
Figure 9. Device Turn on Characteristics
TPD4S014 typ_char11_lvsau0.png
Figure 11. Device Turn OFF Characteristics (Overvoltage)
TPD4S014 typ_char2_lvsau0.png
Figure 2. IEC61000-4-2 +8-kV Contact Waveform
TPD4S014 typ_char4_lvsau0.png
Figure 4. Variation of On Resistance with Ambient Temperature
TPD4S014 typ_char6_lvsau0.png
Figure 6. UVLO Threshold Variation With Temperature
TPD4S014 typ_char8_lvsau0.png
Figure 8. Start Up Inrush Current Characteristics
TPD4S014 typ_char10_lvsau0.png
Figure 10. Device Turn OFF Characteristics (Undervoltage)
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