ZHCSPB6D July   2022  – April 2024 TPS1211-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Charge Pump and Gate Driver Output (VS, PU, PD, BST, SRC)
      2. 8.3.2 Capacitive Load Driving
        1. 8.3.2.1 FET Gate Slew Rate Control
        2. 8.3.2.2 Using Precharge FET - (with TPS12111-Q1 Only)
      3. 8.3.3 Overcurrent and Short-Circuit Protection
        1. 8.3.3.1 Overcurrent Protection with Auto-Retry
        2. 8.3.3.2 Overcurrent Protection with Latch-Off
        3. 8.3.3.3 Short-Circuit Protection
      4. 8.3.4 Analog Current Monitor Output (IMON)
      5. 8.3.5 Overvoltage (OV) and Undervoltage Protection (UVLO)
      6. 8.3.6 Remote Temperature Sensing and Protection (DIODE)
      7. 8.3.7 Output Reverse Polarity Protection
      8. 8.3.8 TPS1211x-Q1 as a Simple Gate Driver
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application: Driving Zonal Controller Loads on 12-V Line in Power Distribution Unit
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Typical Application: Reverse Polarity Protection with TPS12110-Q1
      1. 9.3.1 Design Requirements
      2. 9.3.2 External Component Selection
      3. 9.3.3 Application Curves
    4. 9.4 Power Supply Recommendations
    5. 9.5 Layout
      1. 9.5.1 Layout Guidelines
      2. 9.5.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 接收文档更新通知
    2. 10.2 支持资源
    3. 10.3 Trademarks
    4. 10.4 静电放电警告
    5. 10.5 术语表
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.3.3.3 Short-Circuit Protection

Connect a resistor, RISCP, as shown in Figure 8-12.

Use Equation 10 to calculate the required RISCP value.

Equation 10. R I S C P   ( Ω ) = I S C   ×   R S N S 15.6   µ   -   600

Where, RSNS is the current sense resistor, and ISC is the desired short-circuit protection level. After the current exceeds the ISC threshold then, PD pulls low to SRC within 1.2 µs in TPS12111-Q1, TPS12112-Q1 and 4 µs in TPS12110-Q1, protecting the FET. FLT_I asserts low at the same time. Subsequent to this event, the charge and discharge cycles of CTMR starts similar to the behavior post FET OFF event in the over current protection scheme.

Latch-off can also achieved in the similar way as explained in the overcurrent protection scheme.

Note: Connect IWRN pin to GND if only short-circuit protection is required. RISCP resistor can be selected as per Section 8.3.3.3.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |