ZHCSDD8D October 2014 – December 2019 TPS1H100-Q1
PRODUCTION DATA.
- 1 特性
- 2 应用
- 3 说明
- 4 修订历史记录
- 5 Pin Configuration and Functions
- 6 Specifications
-
7 Detailed Description
- 7.1 Overview
- 7.2 Functional Block Diagram
- 7.3
Feature Description
- 7.3.1 Accurate Current Sense
- 7.3.2 Programmable Current Limit
- 7.3.3 Inductive-Load Switching-Off Clamp
- 7.3.4
Full Protections and Diagnostics
- 7.3.4.1 Short-to-GND and Overload Detection
- 7.3.4.2 Open-Load Detection
- 7.3.4.3 Short-to-Battery Detection
- 7.3.4.4 Reverse-Polarity Detection
- 7.3.4.5 Thermal Protection Behavior
- 7.3.4.6 UVLO Protection
- 7.3.4.7 Loss of GND Protection
- 7.3.4.8 Loss of Power Supply Protection
- 7.3.4.9 Reverse Current Protection
- 7.3.4.10 Protection for MCU I/Os
- 7.3.5 Diagnostic Enable Function
- 7.4 Device Functional Modes
- 8 Application and Implementation
- 9 Power Supply Recommendations
- 10Layout
- 11器件和文档支持
- 12机械、封装和可订购信息
10.3 Thermal Considerations
This device possesses thermal shutdown (TSD) circuitry as a protection from overheating. For continuous normal operation, the junction temperature should not exceed the thermal-shutdown trip point. If the junction temperature exceeds the thermal-shutdown trip point, the output turns off. When the junction temperature falls below the thermal-shutdown trip point, the output turns on again.
Calculate the power dissipated by the device according to Equation 13.
Equation 13. 
where
- PT = Total power dissipation of the device
After determining the power dissipated by the device, calculate the junction temperature from the ambient temperature and the device thermal impedance.
Equation 14. 