ZHCSBP7C October   2013  – December 2018 TPS24750 , TPS24751

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      应用原理图 (12V/10A)
      2.      瞬态输出短路响应
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Descriptions
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  DRAIN
      2. 9.3.2  EN
      3. 9.3.3  FLTb
      4. 9.3.4  GATE
      5. 9.3.5  GND
      6. 9.3.6  IMON
      7. 9.3.7  OUT
      8. 9.3.8  OV
      9. 9.3.9  PGb
      10. 9.3.10 PROG
      11. 9.3.11 SENSE
      12. 9.3.12 TIMER
      13. 9.3.13 VCC
    4. 9.4 Device Functional Modes
      1. 9.4.1 Board Plug-In
      2. 9.4.2 Inrush Operation
      3. 9.4.3 Action of the Constant-Power Engine
      4. 9.4.4 Circuit Breaker and Fast Trip
      5. 9.4.5 Automatic Restart
      6. 9.4.6 Start-Up with Short on Output
      7. 9.4.7 PGb, FLTb, and Timer Operations
        1. 9.4.7.1 Overtemperature Shutdown
        2. 9.4.7.2 Start-Up of Hot-Swap Circuit by VCC or EN
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Power-Limited Start-Up
          1. 10.2.2.1.1 STEP 1. Choose RSENSE, RSET, and RIMON
          2. 10.2.2.1.2 STEP 2. Choose Power-Limit Value, PLIM, and RPROG
          3. 10.2.2.1.3 STEP 3. Choose Output Voltage Rising Time, tON, and Timing Capacitor CT
          4. 10.2.2.1.4 STEP 4. Calculate the Retry-Mode Duty Ratio
          5. 10.2.2.1.5 STEP 5. Select R1, R2, and R3 for UV and OV
          6. 10.2.2.1.6 STEP 6. Choose R4, R5, and C1
        2. 10.2.2.2 Alternative Design Example: Gate Capacitor (dv/dt) Control in Inrush Mode
        3. 10.2.2.3 Additional Design Considerations
          1. 10.2.2.3.1 Use of PGb
          2. 10.2.2.3.2 Output Clamp Diode
          3. 10.2.2.3.3 Gate Clamp Diode
          4. 10.2.2.3.4 Bypass Capacitors
          5. 10.2.2.3.5 Output Short-Circuit Measurements
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
  11. 11Power Supply Recommendations
    1. 11.1 Transient Thermal Impedance
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档
    2. 13.2 相关链接
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Export Control Notice
    8. 13.8 术语表
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.3.4 GATE

This pin provides gate drive to the internal MOSFET. A charge pump sources 30 µA to enhance the internal MOSFET. A 13.9 V clamp between GATE and VCC limits the gate-to-source voltage since VVCC is close to VOUT in normal operation. During start up, a transconductance amplifier regulates the gate voltage of the internal FET to provide inrush current limiting. The TIMER pin charges timer capacitor CT during the inrush. Inrush current limiting continues until the V(GATE – VCC) exceeds the Timer Activation Voltage 5.8 V for VVCC = 12 V. Then the TPS2475x enters into circuit breaker mode. In the circuit breaker mode, the current flowing in RSENSE is compared with the current limit threshold derived from the MOSFET power limit scheme (see the PROG definition). If the current flowing in RSENSE exceeds the current limit threshold, then the internal pass MOSFET will be turned off. The GATE pin is disabled by the following three mechanisms:

  1. GATE is pulled down by an 11-mA current source when
    • The fault timer expires during an overload current fault (VIMON > 675 mV)
    • VEN is below its falling threshold
    • VVCC drops below the UVLO threshold
    • VOV is above its rising threshold
  2. GATE is pulled down by a 1-A current source for 13.5 µs when a hard output short circuit occurs and V(VCC – SENSE) is greater than 60 mV, that is, the fast-trip shutdown threshold. After fast-trip shutdown is complete, an 11-mA sustaining current ensures that the internal FET remains off.
  3. GATE is discharged by a 20-kΩ resistor to GND if the chip die temperature exceeds the OTSD rising threshold.

GATE remains low in latch mode (TPS24750) and attempts a restart periodically in retry mode (TPS24751).

Connect a capacitor from this pin to GND to control the slew rate of the output voltage at power-on. This pin can be left floating to obtain a predetermined slew rate on the output.

If used, any capacitor connecting GATE and GND must not exceed 1 μF and it must be connected in series with a resistor of no less than 1 kΩ. No external resistor must be directly connected from GATE to GND or from GATE to OUT.

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