ZHCSBP7C October   2013  – December 2018 TPS24750 , TPS24751

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
    1.     Device Images
      1.      应用原理图 (12V/10A)
      2.      瞬态输出短路响应
  4. 4 修订历史记录
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Parameter Measurement Information
  9. 9 Detailed Descriptions
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1  DRAIN
      2. 9.3.2  EN
      3. 9.3.3  FLTb
      4. 9.3.4  GATE
      5. 9.3.5  GND
      6. 9.3.6  IMON
      7. 9.3.7  OUT
      8. 9.3.8  OV
      9. 9.3.9  PGb
      10. 9.3.10 PROG
      11. 9.3.11 SENSE
      12. 9.3.12 TIMER
      13. 9.3.13 VCC
    4. 9.4 Device Functional Modes
      1. 9.4.1 Board Plug-In
      2. 9.4.2 Inrush Operation
      3. 9.4.3 Action of the Constant-Power Engine
      4. 9.4.4 Circuit Breaker and Fast Trip
      5. 9.4.5 Automatic Restart
      6. 9.4.6 Start-Up with Short on Output
      7. 9.4.7 PGb, FLTb, and Timer Operations
        1. 9.4.7.1 Overtemperature Shutdown
        2. 9.4.7.2 Start-Up of Hot-Swap Circuit by VCC or EN
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Power-Limited Start-Up
          1. 10.2.2.1.1 STEP 1. Choose RSENSE, RSET, and RIMON
          2. 10.2.2.1.2 STEP 2. Choose Power-Limit Value, PLIM, and RPROG
          3. 10.2.2.1.3 STEP 3. Choose Output Voltage Rising Time, tON, and Timing Capacitor CT
          4. 10.2.2.1.4 STEP 4. Calculate the Retry-Mode Duty Ratio
          5. 10.2.2.1.5 STEP 5. Select R1, R2, and R3 for UV and OV
          6. 10.2.2.1.6 STEP 6. Choose R4, R5, and C1
        2. 10.2.2.2 Alternative Design Example: Gate Capacitor (dv/dt) Control in Inrush Mode
        3. 10.2.2.3 Additional Design Considerations
          1. 10.2.2.3.1 Use of PGb
          2. 10.2.2.3.2 Output Clamp Diode
          3. 10.2.2.3.3 Gate Clamp Diode
          4. 10.2.2.3.4 Bypass Capacitors
          5. 10.2.2.3.5 Output Short-Circuit Measurements
      3. 10.2.3 Application Curves
    3. 10.3 System Examples
  11. 11Power Supply Recommendations
    1. 11.1 Transient Thermal Impedance
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13器件和文档支持
    1. 13.1 文档支持
      1. 13.1.1 相关文档
    2. 13.2 相关链接
    3. 13.3 接收文档更新通知
    4. 13.4 社区资源
    5. 13.5 商标
    6. 13.6 静电放电警告
    7. 13.7 Export Control Notice
    8. 13.8 术语表
  14. 14机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

9.3.12 TIMER

A capacitor CT connected from the TIMER pin to GND determines the overload fault timing. TIMER sources 10 µA when an overload is present, and discharges CT at 10 µA otherwise. Internal FET is turned off when VTIMER reaches 1.35 V. In an application implementing auto-retry after a fault, this capacitor also determines the period before the internal FET is re-enabled. A minimum timing capacitance of 1 nF is recommended to ensure proper operation of the fault timer. The value of CT can be calculated from the desired fault time tFLT, using Equation 4.

Equation 4. TPS24750 TPS24751 EQ_Ct_1_LVSAL1.gif

Either latch mode (TPS24750) or retry mode (TPS24751) occurs if the load current exceeds the current limit threshold or the fast trip shutdown threshold. While in latch mode, the TIMER pin continues to periodically charge and discharge the attached capacitor. In retry mode, the internal MOSFET is disabled for sixteen cycles of TIMER charging and discharging. The TIMER pin is pulled to GND by a 2 mA current source at the end of the 16th cycle of charging and discharging. The internal MOSFET is then re-enabled. The TIMER pin capacitor, CT, can also be discharged to GND during latch mode or retry mode in the following way:

  • A 2-mA current sinks TIMER whenever any of the following occurs:
    • VEN is below its falling threshold.
    • VVCC drops below the UVLO threshold.
    • VOV is above its rising threshold.

TIMER is not affected when the die temperature exceeds the OTSD threshold.
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