ZHCSET0D December   2015  – December 2019 TPS2H000-Q1

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
    1.     Device Images
      1.      典型应用原理图
      2.      驱动具有可调节电流限制的电容性负载
  4. 修订历史记录
  5. Device Comparison Table
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Switching Characteristics
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Pin Current and Voltage Conventions
      2. 8.3.2 Accurate Current Sense
      3. 8.3.3 Adjustable Current Limit
      4. 8.3.4 Inductive-Load Switching-Off Clamp
      5. 8.3.5 Fault Detection and Reporting
        1. 8.3.5.1 Diagnostic Enable Function
        2. 8.3.5.2 Multiplexing of Current Sense
        3. 8.3.5.3 Fault Table
        4. 8.3.5.4 STx and FAULT Reporting
      6. 8.3.6 Full Diagnostics
        1. 8.3.6.1 Short-to-GND and Overload Detection
        2. 8.3.6.2 Open-Load Detection
          1. 8.3.6.2.1 Channel On
          2. 8.3.6.2.2 Channel Off
        3. 8.3.6.3 Short-to-Battery Detection
        4. 8.3.6.4 Reverse Polarity Detection
        5. 8.3.6.5 Thermal Fault Detection
          1. 8.3.6.5.1 Thermal Shutdown
      7. 8.3.7 Full Protections
        1. 8.3.7.1 UVLO Protection
        2. 8.3.7.2 Loss-of-GND Protection
        3. 8.3.7.3 Protection for Loss of Power Supply
        4. 8.3.7.4 Reverse-Current Protection
        5. 8.3.7.5 MCU I/O Protection
    4. 8.4 Device Functional Modes
      1. 8.4.1 Working Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Examples
      1. 11.2.1 Without a GND Network
      2. 11.2.2 With a GND Network
  12. 12器件和文档支持
    1. 12.1 接收文档更新通知
    2. 12.2 社区资源
    3. 12.3 商标
    4. 12.4 静电放电警告
    5. 12.5 Glossary
  13. 13机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

Short-to-Battery Detection

Short-to-battery has the same detection mechanism and behavior as open-load detection, in both the on-state and off-state. See Table 2 for more details.

In the on-state, reverse current flows through the FET instead of the body diode, leading to less power dissipation. Thus, the worst case occurs in the off-state.

  • If VOUTx – VVS < V(F) (body diode forward voltage), no reverse current occurs.
  • If VOUTx – VVS > V(F), reverse current occurs. The current must be limited to less than IR(1). Setting an INx pin high can minimize the power stress on its channel. Also, for external reverse protection, see Reverse-Current Protection for more details.