ZHCS155C March 2011 – November 2023 TPS40170
PRODUCTION DATA
- 1
- 1 特性
- 2 应用
- 3 说明
- 4 Pin Configuration and Functions
- 5 Specifications
-
6 Detailed Description
- 6.1 Overview
- 6.2 Functional Block Diagram
- 6.3
Feature Description
- 6.3.1 LDO Linear Regulators and Enable
- 6.3.2 Input Undervoltage Lockout (UVLO)
- 6.3.3 Oscillator and Voltage Feed-Forward
- 6.3.4 Overcurrent Protection and Short-Circuit Protection (OCP and SCP)
- 6.3.5 Soft-Start and Fault-Logic
- 6.3.6 Overtemperature Fault
- 6.3.7 Tracking
- 6.3.8 Adaptive Drivers
- 6.3.9 Start-Up into Pre-Biased Output
- 6.3.10 Power Good (PGOOD)
- 6.3.11 PGND and AGND
- 6.4 Device Functional Modes
-
7 Application and Implementation
- 7.1 Application Information
- 7.2
Typical Application
- 7.2.1 Design Requirements
- 7.2.2
Detailed Design Procedure
- 7.2.2.1 Custom Design with WEBENCH® Tools
- 7.2.2.2 List of Materials
- 7.2.2.3 Select a Switching Frequency
- 7.2.2.4 Inductor Selection (L1)
- 7.2.2.5 Output Capacitor Selection (C9)
- 7.2.2.6 Peak Current Rating of Inductor
- 7.2.2.7 Input Capacitor Selection (C1, C6)
- 7.2.2.8 MOSFET Switch Selection (Q1, Q2)
- 7.2.2.9 Timing Resistor (R7)
- 7.2.2.10 UVLO Programming Resistors (R2, R6)
- 7.2.2.11 Boot-Strap Capacitor (C7)
- 7.2.2.12 VIN Bypass Capacitor (C18)
- 7.2.2.13 VBP Bypass Capacitor (C19)
- 7.2.2.14 VDD Bypass Capacitor (C16)
- 7.2.2.15 SS Timing Capacitor (C15)
- 7.2.2.16 ILIM Resistor (R9, C17)
- 7.2.2.17 SCP Multiplier Selection (R5)
- 7.2.2.18 Feedback Divider (R10, R11)
- 7.2.2.19 Compensation: (R4, R13, C13, C14, C21)
- 7.2.3 Application Curves
- 7.3 Power Supply Recommendations
- 7.4 Layout
- 8 Device and Documentation Support
- 9 Revision History
- 10Mechanical, Packaging, and Orderable Information
7.2.2.8 MOSFET Switch Selection (Q1, Q2)
Using the J/K method for MOSFET optimization, apply Equation 30 through Equation 33.
High-side gate (Q1):
Equation 38.
Equation 31.
Low-side gate (Q2):
Equation 32.
Equation 33.
Optimizing for 300 kHz, 24 V input, 5 V output at 6 A, calculate ratios of 5.9 mΩ/nC and 0.5 mΩ/nC for the high-side and low-side FETS respectively. BSC110N06NS2 (Ratio 1.2) and BSC076N06NS3 (Ratio 0.69) MOSFETS are selected.