ZHCS155C March   2011  – November 2023 TPS40170

PRODUCTION DATA  

  1.   1
  2. 1 特性
  3. 2 应用
  4. 3 说明
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Handling Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  LDO Linear Regulators and Enable
      2. 6.3.2  Input Undervoltage Lockout (UVLO)
        1. 6.3.2.1 Equations for Programming the Input UVLO:
      3. 6.3.3  Oscillator and Voltage Feed-Forward
        1. 6.3.3.1 Calculating the Timing Resistance (RRT)
      4. 6.3.4  Overcurrent Protection and Short-Circuit Protection (OCP and SCP)
      5. 6.3.5  Soft-Start and Fault-Logic
        1. 6.3.5.1 Soft Start During Overcurrent Fault
        2. 6.3.5.2 Equations for Soft Start and Restart Time
      6. 6.3.6  Overtemperature Fault
      7. 6.3.7  Tracking
      8. 6.3.8  Adaptive Drivers
      9. 6.3.9  Start-Up into Pre-Biased Output
      10. 6.3.10 Power Good (PGOOD)
      11. 6.3.11 PGND and AGND
    4. 6.4 Device Functional Modes
      1. 6.4.1 Frequency Synchronization
      2. 6.4.2 Operation Near Minimum VIN (VVIN ≤ 4.5 V)
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Bootstrap Resistor
      2. 7.1.2 SW Node Snubber Capacitor
      3. 7.1.3 Input Resistor
      4. 7.1.4 LDRV Gate Capacitor
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
        1. 7.2.2.1  Custom Design with WEBENCH® Tools
        2. 7.2.2.2  List of Materials
        3. 7.2.2.3  Select a Switching Frequency
        4. 7.2.2.4  Inductor Selection (L1)
        5. 7.2.2.5  Output Capacitor Selection (C9)
        6. 7.2.2.6  Peak Current Rating of Inductor
        7. 7.2.2.7  Input Capacitor Selection (C1, C6)
        8. 7.2.2.8  MOSFET Switch Selection (Q1, Q2)
        9. 7.2.2.9  Timing Resistor (R7)
        10. 7.2.2.10 UVLO Programming Resistors (R2, R6)
        11. 7.2.2.11 Boot-Strap Capacitor (C7)
        12. 7.2.2.12 VIN Bypass Capacitor (C18)
        13. 7.2.2.13 VBP Bypass Capacitor (C19)
        14. 7.2.2.14 VDD Bypass Capacitor (C16)
        15. 7.2.2.15 SS Timing Capacitor (C15)
        16. 7.2.2.16 ILIM Resistor (R9, C17)
        17. 7.2.2.17 SCP Multiplier Selection (R5)
        18. 7.2.2.18 Feedback Divider (R10, R11)
        19. 7.2.2.19 Compensation: (R4, R13, C13, C14, C21)
      3. 7.2.3 Application Curves
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 第三方米6体育平台手机版_好二三四免责声明
      2. 8.1.2 Development Support
        1. 8.1.2.1 Custom Design with WEBENCH® Tools
      3. 8.1.3 Related Devices
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 接收文档更新通知
    4. 8.4 支持资源
    5. 8.5 Trademarks
    6. 8.6 静电放电警告
    7. 8.7 术语表
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

7.4.1 Layout Guidelines

Top Copper, Viewed From Top illustrates an example layout. For the controller, it is important to carefully connect noise sensitive signals such as RT, SS, FB, and comp as close to the IC as possible and connect to AGND as shown. The PowerPad must be connected to any internal PCB ground planes using multiple vias directly under the IC. The AGND and PGND must be connected at a single point.

When using high-performance FETs such as NexFET™ from Texas Instruments, careful attention to the layout is required. Minimize the distance between positive node of the input ceramic capacitor and the drain pin of the control (high-side) FET. Minimize the distance between the negative node of the input ceramic capacitor and the source pin of the synchronization (low-side) FET. Because of the large gate drive, smaller gate charge, and faster turn-on times of the high-performance FETs, it is recommended to use a minimum of 4, 10 µF ceramic input capacitors such as TDK #C3216X5R1A106M. Ensure the layout allows a continuous flow of the power planes.

The layout of the HPA578 EVM is shown in Top Copper, Viewed From Top through Internal Layer 2, Viewed from Top for reference.

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