ZHCSAO5B December   2012  – October 2015 TPS51604

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
    7. 6.7 Typical Power Block MOSFET Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 UVLO Protection
      2. 7.3.2 PWM Pin
      3. 7.3.3 SKIP Pin
        1. 7.3.3.1 Zero Crossing (ZX) Operation
      4. 7.3.4 Adaptive Dead-Time Control and Shoot-Through Protection
      5. 7.3.5 Integrated Boost-Switch
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Step 1: Select the Input (VDD) Capacitor
        2. 8.2.2.2 Step 2: Select Boot Capacitor and Boot Resistor
        3. 8.2.2.3 Step 3: Establish Connection Between TPS51604 and Controller
        4. 8.2.2.4 Step 4: Establish Connection Between TPS51604 and the Power Block
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 社区资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10 Layout

10.1 Layout Guidelines

To improve the switching characteristics and design efficiency, these layout rules must be considered:

  • Locate the driver as close as possible to the MOSFETs.
  • Locate the VDD and bootstrap capacitors as close as possible to the driver.
  • Pay special attention to the GND trace. Use the thermal pad of the package as the GND by connecting it to the GND pin. The GND trace or pad from the driver goes directly to the source of the MOSFET, but should not include the high current path of the main current flowing through the drain and source of the MOSFET.
  • Use a similar rule for the switch-node as for the GND.
  • Use wide traces for DRVH and DRVL closely following the related SW and GND traces. A width of between 80 and 100 mils is preferable where possible.
  • Place the bypass capacitors as close as possible to the driver.
  • Avoid PWM and enable traces going close to the SW and pad where high dV/dT voltage can induce significant noise into the relatively high-impedance leads.

A poor layout can decrease the reliability of the entire system.

10.2 Layout Example

TPS51604 layout_slusba6.png Figure 24. Layout Recommendation
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