米6体育平台手机版

ZHCSMB6E March 2010 – October 2020 TPS62065 , TPS62067

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

DSG|8
- MPDS308C

散热焊盘机械数据 (封装 | 引脚)

DSG|8
- QFND141I

订购信息

7.5 Electrical Characteristics

T_J = -40°C to 125°C, typical values are at T_A = 25°C. Unless otherwise noted, specifications apply for condition V_IN = EN = 3.6 V. External components C_IN = 10 μF 0603, C_OUT = 10 μF 0603, L = 1 μH, see the parameter measurement information.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
SUPPLY
V_IN	Input voltage range		2.9		6	V
I_Q	Operating quiescent current	I_OUT = 0 mA, device operating in PFM mode and device not switching		18		μA
I_SD	Shutdown current	EN = GND, current into AVIN and PVIN⁽¹⁾		0.1	1	μA
V_UVLO	Undervoltage lockout threshold	Falling	1.73	1.78	1.83	V
V_UVLO	Undervoltage lockout threshold	Rising	1.9	1.95	1.99	V
ENABLE, MODE
V_IH	High level input voltage	2.9 V ≤ V_IN ≤ 6 V	1		6	V
V_IL	Low level input voltage	2.9 V ≤ V_IN ≤ 6 V	0		0.4	V
I_IN	Input bias current	EN, mode tied to GND or AVIN⁽¹⁾		0.01	1	μA
POWER GOOD OPEN-DRAIN OUTPUT
V_THPG	Power good threshold voltage	Rising feedback voltage	93%	95%	98%
V_THPG	Power good threshold voltage	Falling feedback voltage	87%	90%	92%
V_OL	Output low voltage	I_OUT = –1mA; must be limited by external pullup resistor ⁽¹⁾			0.3	V
V_H	Output high voltage	Voltage applied to PG pin through external pullup resistor			V_IN	V
I_LKG	Leakage current into PG pin	V_(PG) = 3.6V⁽¹⁾			100	nA
t_PGDL	Internal power good delay time			5		µs
POWER SWITCH
R_DS(on)	High-side MOSFET on-resistance	V_IN = 3.6 V ⁽¹⁾		120	180	mΩ
R_DS(on)	High-side MOSFET on-resistance	V_IN = 5 V⁽¹⁾		95	150	mΩ
R_DS(on)	Low-side MOSFET on-resistance	V_IN = 3.6 V⁽¹⁾		90	130	mΩ
R_DS(on)	Low-side MOSFET on-resistance	V_IN = 5 V⁽¹⁾		75	100	mΩ
I_LIMF	Forward current limit MOSFET high-side and low-side	2.9 V ≤ V_IN ≤ 6 V	2300	2750	3300	mA
T_SD	Thermal shutdown	Increasing junction temperature		150		°C
T_SD	Thermal shutdown hysteresis	Decreasing junction temperature		10		°C
OSCILLATOR
f_SW	Oscillator frequency	2.9 V ≤ V_IN ≤ 6 V	2.6	3	3.4	MHz
OUTPUT
V_ref	Reference voltage			600		mV
V_FB(PWM)	Feedback voltage PWM mode	PWM operation, MODE = V_IN , 2.9 V ≤ V_IN ≤ 6 V, 0 mA load	–1.5%	0%	1.5%
V_FB(PFM)	Feedback voltage PFM mode, voltage positioning	device in PFM mode, voltage positioning active⁽²⁾		1%
V_FB	Load regulation			–0.5		%/A
V_FB	Line regulation			0		%/V
R_(Discharge)	Internal discharge resistor	Activated with EN = GND, 2.9 V ≤ V_IN ≤ 6 V, 0.8 ≤ V_OUT ≤ 3.6 V	75	200	1450	Ω
t_START	Start-up time	Time from active EN to reach 95% of V_OUT		500		μs

(1) Maximum value applies for T_J = 85°C

(2) In PFM mode, the internal reference voltage is set to typ. 1.01 × V_ref. See the parameter measurement information.