ZHCSKI6U January 2006 – September 2024 TPS737
PRODUCTION DATA
请参考 PDF 数据表获取器件具体的封装图。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
VIN | Input voltage range(1)(2) | 2.2 | 5.5 | V | |||
VFB | Internal reference (DCQ package) | TJ = 25°C | 1.198 | 1.204 | 1.21 | V | |
VFB | Internal reference (DRB and DRV packages) | TJ = 25°C | 1.192 | 1.204 | 1.216 | V | |
VOUT | Output voltage range (TPS73701)(3) | VFB | 5.5 - VDO | V | |||
Accuracy(1)(4) | Nominal | TJ = 25°C | –1 | 1 | % | ||
5.36V < VIN < 5.5V, VOUT = 5.08V, 10mA < IOUT < 800mA, –40°C < TJ < 85°C, TPS73701 (DCQ) |
–2 | 2 | |||||
over VIN, IOUT, and T | VOUT + 0.5V ≤ VIN ≤ 5.5V; 10mA ≤ IOUT ≤ 1A, legacy silicon | –3 | ±0.5 | 3 | |||
VOUT + 0.5V ≤ VIN ≤ 5.5V; 10mA ≤ IOUT ≤ 1A, new silicon | –1.5 | ±0.5 | 1.5 | ||||
ΔVOUT(ΔVIN) | Line regulation(1) | VOUT(nom) + 0.5V ≤ VIN ≤ 5.5V | 0.01 | %/V | |||
ΔVOUT(ΔIOUT) | Load regulation | 1mA ≤ IOUT ≤ 1A | 0.002 | %/mA | |||
ΔVOUT(ΔIOUT) | Load regulation | 10mA ≤ IOUT ≤ 1 A | 0.0005 | %/mA | |||
VDO | Dropout voltage(5) (VIN = VOUT(nom) - 0.1V) | IOUT = 1A, legacy silicon | 130 | 500 | mV | ||
VDO | Dropout voltage(5) (VIN = VOUT(nom) - 0.1V) | IOUT = 1A, new silicon | 122 | 250 | mV | ||
ZO(DO) | Output impedance in dropout | 2.2V ≤ VIN ≤ VOUT + VDO | 0.25 | Ω | |||
ICL | Output current limit | VOUT = 0.9 × VOUT(nom) | 1.05 | 1.6 | 2.2 | A | |
ISC | Short-circuit current | VOUT = 0V, legacy silicon | 450 | mA | |||
ISC | Short-circuit current | VOUT = 0V, new silicon | 510 | mA | |||
IREV | Reverse leakage current(6) (-IIN) | VEN ≤ 0.5V, 0V ≤ VIN ≤ VOUT | 0.1 | µA | |||
IGND | Ground pin current | IOUT = 10mA (IQ) | 400 | µA | |||
IGND | Ground pin current | IOUT = 1A, legacy silicon | 1300 | µA | |||
IGND | Ground pin current | IOUT = 1A, new silicon | 880 | µA | |||
ISHDN | Shutdown current (IGND) | VEN ≤ 0.5V, VOUT ≤ VIN ≤ 5.5V | 20 | nA | |||
IFB | Feedback pin current (TPS73701) | 0.1 | 0.6 | µA | |||
PSRR | Power-supply rejection ratio (ripple rejection) | f = 100Hz, IOUT = 1A | 58 | dB | |||
f = 10kHz, IOUT = 1A | 37 | ||||||
VN | Output noise voltage, BW = 10Hz to 100kHz | COUT = 10µF | 27 x VOUT | µVRMS | |||
tSTR | Startup time | VOUT = 3V, RL = 30Ω, COUT = 1μF, legacy silicon | 600 | µs | |||
tSTR | Startup time | VOUT = 3V, RL = 30Ω, COUT = 1μF, new silicon | 431 | µs | |||
VEN(high) | EN pin high (enabled) | 1.7 | VIN | V | |||
VEN(low) | EN pin low (shutdown) | 0 | 0.5 | V | |||
IEN | Enable pin current (enabled) | VEN = 5.5V | 20 | nA | |||
TSD | Thermal shutdown temperature | Shutdown, temperature increasing | 160 | °C | |||
Reset, temperature decreasing | 140 | ||||||
TJ | Operating junction temperature | –40 | 125 | ℃ |