ZHCSAL3R December   2005  – April 2017 TPS74401

PRODUCTION DATA.  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 修订历史记录
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Enable, Shutdown
      2. 7.3.2 Power-Good (VQFN Package Only)
      3. 7.3.3 Internal Current Limit
      4. 7.3.4 Thermal Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Normal Operation
      2. 7.4.2 Dropout Operation
      3. 7.4.3 Disabled
    5. 7.5 Programming
      1. 7.5.1 Programmable Soft-Start
      2. 7.5.2 Sequencing Requirements
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Input, Output, and Bias Capacitor Requirements
      2. 8.1.2 Transient Response
      3. 8.1.3 Dropout Voltage
      4. 8.1.4 Output Noise
    2. 8.2 Typical Applications
      1. 8.2.1 Setting the TPS74401
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Using an Auxiliary Bias Rail
      3. 8.2.3 Without an Auxiliary Bias
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Power Dissipation
    4. 10.4 Thermal Considerations
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 开发支持
        1. 11.1.1.1 评估模块
        2. 11.1.1.2 Spice 模型
    2. 11.2 文档支持
      1. 11.2.1 相关文档　
    3. 11.3 接收文档更新通知
    4. 11.4 社区资源
    5. 11.5 商标
    6. 11.6 静电放电警告
    7. 11.7 Glossary
  12. 12机械、封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VIN, VBIAS Input voltage –0.3 6 V
VEN Enable voltage –0.3 6 V
VPG Power-good voltage –0.3 6 V
IPG PG sink current 0 1.5 mA
VSS SS pin voltage –0.3 6 V
VFB Feedback pin voltage –0.3 6 V
VOUT Output voltage –0.3 VIN + 0.3 V
IOUT Maximum output current Internally limited
Output short-circuit duration Indefinite
PDISS Continuous total power dissipation See Thermal Information
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –55 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VIN Input supply voltage range 1.1 5.5 V
VEN Enable supply voltage range 0 5.5 V
VBIAS(1) BIAS supply voltage range VOUT + VDO (VBIAS) 5.5 V
IOUT Output current 0 3 A
COUT Output capacitor 0 µF
CIN(2) Input capacitor 1 µF
CBIAS Bias capacitor 1 µF
TJ Operating junction temperature –40 125 °C
(1) BIAS supply is required when VIN is below VOUT + VDO (VBIAS).
(2) If VIN and VBIAS are connected to the same supply, the recommended minimum capacitor for the supply is 4.7 µF.

6.4 Thermal Information

THERMAL METRIC(1)(2) TPS74401(3) UNIT
RGW
(VQFN)		 RGR
(VQFN)		 KTW
(DDPAK)
20 PINS 20 PINS 7 PINS
RθJA Junction-to-ambient thermal resistance 35.4 39.1 26.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 32.4 29.3 41.7 °C/W
RθJB Junction-to-board thermal resistance 14.7 10.2 12.5 °C/W
ψJT Junction-to-top characterization parameter 0.4 0.4 4.0 °C/W
ψJB Junction-to-board characterization parameter 14.8 10.1 7.3 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 3.9 2.0 0.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
(2) For thermal estimates of this device based on PCB copper area, see the TI PCB Thermal Calculator.
(3) Thermal data for the RGW, RGR, and KTW packages are derived by thermal simulations based on JEDEC-standard methodology as specified in the JESD51 series. The following assumptions are used in the simulations:
  1. i. RGW and RGR: The exposed pad is connected to the PCB ground layer through a 4x4 thermal via array.                           
    - ii. KTW: The exposed pad is connected to the PCB ground layer through a 6x6 thermal via array.
  2. Each of top and bottom copper layers has a dedicated pattern for 20% copper coverage.
  3. These data were generated with only a single device at the center of a JEDEC high-K (2s2p) board with 3in × 3in copper area. To understand the effects of the copper area on thermal performance, refer to the Thermal Considerations section.

6.5 Electrical Characteristics

At VEN = 1.1 V, VIN = VOUT + 0.3 V, CIN = CBIAS = 0.1 μF, COUT = 10 μF, IOUT = 50 mA, VBIAS = 5.0 V, and TJ = –40°C to 125°C, unless otherwise noted. Typical values are at TJ = 25°C.
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VIN Input voltage range VOUT + VDO 5.5 V
VBIAS Bias pin voltage range 2.375 5.25 V
VREF Internal reference TJ = 25°C 0.796 0.8 0.804 V
VOUT Output voltage range VIN = 5 V, IOUT = 1.5 A, VBIAS = 5 V VREF 3.6 V
Accuracy 2.97 V ≤ VBIAS ≤ 5.25 V, VOUT + 1.62 V ≤ VBIAS,
50 mA ≤ IOUT ≤ 3.0 A(1)		 –1% ±0.2% 1%
VOUT + VDO BIAS ≤ VBIAS ≤ 5.25 V,
100 mA ≤ IOUT ≤ I VDO BIAS , VQFN(2)		 –1% ±0.2% 1%
ΔVOUT(ΔVIN) Line regulation VOUT(nom) + 0.3 ≤ VIN  ≤ 5.5 V, VQFN 0.0005 0.05 %/V
VOUT(nom) + 0.3 ≤ VIN  ≤ 5.5 V, DDPAK 0.0005 0.06
ΔVOUT(ΔIOUT) Load regulation 0 mA ≤ IOUT ≤ 50 mA 0.013 %/mA
50 mA ≤ IOUT ≤ 3.0 A 0.03 %/A
VDO VIN dropout voltage(3) IOUT = 3.0 A, VBIAS – VOUT(nom) ≥ 1.62 V, VQFN 115 195 mV
IOUT = 3.0 A, VBIAS – VOUT(nom) ≥ 1.62 V, DDPAK 120 240
VBIAS dropout voltage(3) IOUT = 3.0 A, VIN = VBIAS 1.62 V
IOUT = 3.0 A 1.62
IOUT = 1.0 A 1.35
IOUT = 500 mA 1.27
IOUT = 100 mA 1.16
ICL Current limit VOUT = 80% × VOUT(nom), VQFN 3.8 6.0 A
VOUT = 80% × VOUT(nom), DDPAK 3.5 6.0
IBIAS Bias pin current IOUT = 0 mA to 3.0 A 2 4 mA
ISHDN Shutdown supply current (VIN) VEN ≤ 0.4 V 1 100 μA
IFB Feedback pin current(4) IOUT = 50 mA to 3.0 A –250 95 250 nA
PSRR(5) Power-supply rejection
(VIN to VOUT)		 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 73 dB
800 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 42
Power-supply rejection
(VBIAS to VOUT)		 1 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 62 dB
800 kHz, IOUT = 1.5 A, VIN = 1.8 V, VOUT = 1.5 V 50
Vn Output noise voltage 100 Hz to 100 kHz, IOUT = 1.5 A, CSS = 0.001 µF 16 × VOUT µVRMS
VTRAN %VOUT droop during load transient IOUT = 100 mA to 3.0 A at 1 A/µs, COUT = 0 µF 4 %VOUT
ISS Soft-start charging current VSS = 0.4 V 0.5 0.73 1 μA
VEN(high) Enable input high level 1.1 5.5 V
VEN(low) Enable input low level 0 0.4 V
VEN(hys) Enable pin hysteresis 50 mV
IEN Enable pin current VEN = 5 V 0.1 1 μA
VIT PG trip threshold VOUT decreasing 86.5 90 93.5 %VOUT
VHYS PG trip hysteresis 3 %VOUT
VPG(low) PG output low voltage IPG = 1 mA (sinking), VOUT < VIT 0.3 V
IPG(lkg) PG leakage current VPG = 5.25 V, VOUT > VIT 0.03 1 μA
TJ Operating junction temperature –40 125 °C
TSD Thermal shutdown temperature Shutdown, temperature increasing 155 °C
Reset, temperature decreasing 140
(1) Devices tested at 0.8 V; external resistor tolerance is not taken into account.
(2) VOUT is set to 1.5 V to avoid minimum VBIAS restrictions.
(3) Dropout is defined as the voltage from the input to VOUT when VOUT is 2% below nominal.
(4) IFB current flow is out of the device.
(5) See Figure 8 to Figure 11 for PSRR at different conditions.

6.6 Timing Requirements

At VEN = 1.1 V, VIN = VOUT + 0.3 V, CIN = CBIAS = 0.1 μF, COUT = 10 μF, IOUT = 50 mA, VBIAS = 5.0 V, and TJ = –40°C to 125°C, unless otherwise noted. Typical values are at TJ = 25°C.
MIN NOM MAX UNIT
tSTR Minimum startup time (IOUT = 1.5 A, CSS = open) 100 μs
VEN(dg) Enable pin de-glitch time 20 μs

6.7 Typical Characteristics

At TJ = 25°C, VOUT = 1.5 V, VIN = VOUT(nom) + 0.3 V, VBIAS = 3.3 V, IOUT = 50 mA, CIN = 1 μF, CBIAS = 1 μF, CSS = 0.01 μF, and COUT = 10 μF, unless otherwise noted.
TPS74401 tc_load_reg_50ma_bvs066.gif
Figure 1. Load Regulation
TPS74401 tc_line_reg_bvs066.gif
Figure 3. Line Regulation
TPS74401 tc_vdo-vb_vo3_bvs066.gif
Figure 5. VIN Dropout Voltage vs VBIAS  – VOUT and Temperature (TJ)
TPS74401 tc_vdo-iovin_bvs066.gif
Figure 7. VBIAS Dropout Voltage vs IOUT and Temperature (TJ)
TPS74401 tc_psrr-frq100_bvs066.gif
Figure 9. VIN PSRR vs Frequency
TPS74401 tc_psrr-frq3_vb_bvs066.gif
Figure 11. VIN PSRR vs Frequency
TPS74401 tc_noise3_bvs066.gif
Figure 13. Noise Spectral Density
TPS74401 tc_ib-io3_bvs066.gif
Figure 15. IBIAS vs Output Current and Temperature
TPS74401 tc_ib_sdwn-tmp_bvs066.gif
Figure 17. IBIAS Shutdown vs Temperature
TPS74401 tc_pg_bvs066.gif
Figure 19. Low-Level PG Voltage vs PG Current
TPS74401 tc_vb_tran_3a_bvs066.gif
Figure 21. VBIAS Line Transient (3 A)
TPS74401 tc_turn_on_bvs066.gif
Figure 23. Turn-On Response
TPS74401 tc_output_short_recover_bvs066.gif
Figure 25. Output Short-Circuit Recovery
TPS74401 tc_load_reg_3a_bvs066.gif
Figure 2. Load Regulation
TPS74401 tc_vdo-io5_bvs066.gif
Figure 4. VIN Dropout Voltage vs IOUT and Temperature (TJ)
TPS74401 tc_vdo-vb_vo2_bvs066.gif
Figure 6. VIN Dropout Voltage vs VBIAS  – VOUT and Temperature (TJ)
TPS74401 tc_vb-psrr-frq3_bvs066.gif
Figure 8. VBIAS PSRR vs Frequency
TPS74401 tc_psrr-frq2_bvs066.gif
Figure 10. VIN PSRR vs Frequency
TPS74401 tc_psrr-vi_vo_bvs066.gif
Figure 12. VIN PSRR vs VIN  – VOUT
TPS74401 tc_noise3.3_bvs066.gif
Figure 14. Noise Spectral Density
TPS74401 tc_ib-vb_io_bvs066.gif
Figure 16. IBIAS vs VBIAS and VOUT
TPS74401 tc_iss-tmp_bvs066.gif
Figure 18. Soft-Start Charging Current (ISS) vs Temperature
TPS74401 tc_load_resp_bvs066.gif
Figure 20. Load Transient Response
TPS74401 tc_vi_tran_3a_bvs066.gif
Figure 22. VIN Line Transient (3 A)
TPS74401 tc_pwr_up_dwn_bvs066.gif
Figure 24. Power-Up, Power-Down
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