The TPS74701-Q1 offers very low dropout performance, making the device designed for high-current, low V_IN, low V_OUT applications. The low dropout of the TPS74701-Q1 allows the device to be used in place of a DC/DC converter and still achieve good efficiency. This feature provides designers with the power architecture for their applications to achieve the smallest, simplest, and lowest cost solution.

There are two different specifications for dropout voltage with the TPS74701-Q1. The first specification (shown in Figure 6-1) is referred to as V_IN dropout and is used when an external bias voltage is applied to achieve low dropout. This specification assumes that V_BIAS is at least 1.62 V above V_OUT, which is the case for V_BIAS when powered by a 3.3-V rail with 5% tolerance and with V_OUT = 1.5 V. If V_BIAS is higher than V_OUT + 1.62 V, V_IN dropout is less than specified.

Figure 6-1 Typical Application of the TPS74701-Q1 Using an Auxiliary Bias Rail

The second specification (shown in Figure 6-2) is referred to as V_BIAS dropout and applies to applications where IN and BIAS are tied together. This option allows the device to be used in applications where an auxiliary bias voltage is not available or low dropout is not required. Dropout is limited by BIAS in these applications because V_BIAS provides the gate drive to the pass transistor; therefore, V_BIAS must be 1.39 V above V_OUT for the legacy chip or 1.3 V for the new chip⁽¹⁾. Because of this usage, IN and BIAS tied together easily consume huge power. Pay attention not to exceed the power rating of the device package.

Figure 6-2 Typical Application of the TPS74701-Q1 Without an Auxiliary Bias Rail