When configured in PWM mode, the gate drive allows for the programming of two separate dead times:

• between LO off and HO on using RLH
• between HO off and LO on using RHL

The dead time values selected are critical as these directly impact that losses that occur in the converter during these periods. The dead time is carefully chosen to avoid cross-conduction between the high-side FET and low-side FET, while also minimizing the third-quadrant conduction time for the GaN FETs. For this particular application, a dead time of approximately 25 ns was targeted for both T_DLH and T_DHL.

A resistor value of 30 kΩ was used for both RHL and RLH.