The TPS7H60x3-SP series of radiation-hardness-assured (RHA) half-bridge gate drivers are intended for use with enhancement mode GaN FETs. The series consists of the TPS7H6003-SP (200-V driver), TPS7H6013-SP (60-V driver), and the TPS7H6023-SP (22-V driver). The drivers can be utilized in high frequency, high efficiency GaN based power converter designs. Each driver is designed to have a propagation delay of 30 ns (typical) as well as 5.5 ns (typical) high-side to low-side delay matching.

The drivers contain high-side and low-side internal linear regulators. These ensure that the gate voltages are maintained at 5 V in order to prevent any damage of the GaN devices that are being driven. Split outputs on the high-side and low-side drivers provide the user the flexibility to independently adjust the turn-on and turn-off times of the GaN FETs. An external bootstrap diode is required for the gate drivers and as such, the user has the ability to optimize the diode based on the application. The drivers contain an internal switch in series with the bootstrap diode that can be used to prevent overcharging of the bootstrap capacitor and decreases reverse recovery losses in the diode.

The gate drivers have two modes of operation: PWM mode and independent input mode (IIM). The dual mode operation allows for each gate driver to be used with a wide number of PWM controllers to enable both synchronous rectifier control and GaN FET compatibility. The user also has the option to enable input interlock protection in IIM, allowing for anti-shoot through protection in synchronous buck and half-bridge topologies. This protection can also be disabled in IIM if desired, which allows the drivers to be utilized in two-switch forward converters and dual single ended applications.