SCDS216E OCTOBER 2005 – November 2017 TS5A3160
PRODUCTION DATA.
- 1 Features
- 2 Applications
- 3 Description
- 4 Revision History
- 5 Pin Configuration and Functions
-
6 Specifications
- 6.1 Absolute Maximum Ratings
- 6.2 ESD Ratings
- 6.3 Recommended Operating Conditions
- 6.4 Thermal Information
- 6.5 Electrical Characteristics for 5-V Supply
- 6.6 Electrical Characteristics for 3.3-V Supply
- 6.7 Electrical Characteristics for 2.5-V Supply
- 6.8 Electrical Characteristics for 1.8-V Supply
- 6.9 Typical Characteristics
- 7 Parameter Measurement Information
- 8 Detailed Description
- 9 Application and Implementation
- 10Power Supply Recommendations
- 11Layout
- 12Device and Documentation Support
- 13Mechanical, Packaging, and Orderable Information
12 Device and Documentation Support
12.1 Device Support
12.1.1 Device Nomenclature
Table 2. Parameter Description
| SYMBOL | DESCRIPTION |
|---|---|
| VCOM | Voltage at COM |
| VNC | Voltage at NC |
| VNO | Voltage at NO |
| ron | Resistance between COM and NO ports when the channel is ON |
| rpeak | Peak on-state resistance over a specified voltage range |
| Δron | Difference of ron between channels in a specific device |
| ron(flat) | Difference between the maximum and minimum value of ron in a channel over the specified range of conditions |
| INC(OFF) | Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the OFF state under worst-case input and output conditions |
| INC(PWROFF) | Leakage current measured at the NC port during the power-off condition, V+ = 0 |
| INO(OFF) | Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state |
| INO(PWROFF) | Leakage current measured at the NO port during the power-off condition, V+ = 0 |
| INC(ON) | Leakage current measured at the NC port, with the corresponding channel (NC to COM) in the ON state and the output (COM) open |
| INO(ON) | Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM) open |
| INO(OFF) | Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the OFF state and the output (COM) open |
| INO(ON) | Leakage current measured at the NO port, with the corresponding channel (NO to COM) in the ON state and the output (COM) open |
| ICOM(OFF) | Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the OFF state |
| ICOM(PWROFF) | Leakage current measured at the COM port during the power-off condition, V+ = 0 |
| ICOM(ON) | Leakage current measured at the COM port, with the corresponding channel (COM to NO) in the ON state and the output (NO) open |
| VIH | Minimum input voltage for logic high for the control input (IN) |
| VIL | Maximum input voltage for logic low for the control input (IN) |
| VI | Voltage at the control input (IN) |
| IIH, IIL | Leakage current measured at the control input (IN) |
| tON | Turn-on time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning ON. |
| tOFF | Turn-off time for the switch. This parameter is measured under the specified range of conditions and by the propagation delay between the digital control (IN) signal and analog output (COM or NO) signal when the switch is turning OFF. |
| tMBB | Make-before-break time. This parameter is measured under the specified range of conditions and by the propagation delay between the output of two adjacent analog channels (NC and NO) when the control signal changes state. |
| QC | Charge injection is a measurement of unwanted signal coupling from the control (IN) input to the analog (NO or COM) output. This is measured in coulomb (C) and measured by the total charge induced due to switching of the control input.Charge injection, QC = CL × ΔVCOM, CL is the load capacitance and ΔVCOM is the change in analog output voltage. |
| CNC(OFF) | Capacitance at the NC port when the corresponding channel (NC to COM) is OFF |
| CNO(OFF) | Capacitance at the NO port when the corresponding channel (NO to COM) is OFF |
| CNC(ON) | Capacitance at the NC port when the corresponding channel (NC to COM) is ON |
| CNO(ON) | Capacitance at the NO port when the corresponding channel (NO to COM) is ON |
| CCOM(ON) | Capacitance at the COM port when the corresponding channel (COM to NO) is ON |
| CI | Capacitance of IN |
| OISO | OFF isolation of the switch is a measurement of OFF-state switch impedance. This is measured in dB in a specific frequency, with the corresponding channel (NO to COM) in the OFF state. |
| XTALK | Crosstalk is a measurement of unwanted signal coupling from an ON channel to an adjacent ON channel (NC1 to NC2). This is measured in a specific frequency and in dB. |
| BW | Bandwidth of the switch. This is the frequency in which the gain of an ON channel is -3 dB below the DC gain. |
| THD | Total harmonic distortion is defined as the ratio of the root mean square (RMS) value of the second, third, and higher harmonics to the magnitude of fundamental harmonic. |
| I+ | Static power-supply current with the control (IN) pin at V+ or GND |
12.2 Documentation Support
12.2.1 Related Documentation
For related documentation, see the following:
- Implications of Slow or Floating CMOS Inputs, SCBA004
12.3 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.
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TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
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Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.
12.4 Trademarks
E2E is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
12.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
12.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.