SLUSF86 May   2024 UCC21331-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings (Automotive)
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information
    5. 5.5  Power Ratings
    6. 5.6  Insulation Specifications
    7. 5.7  Safety Limiting Values
    8. 5.8  Electrical Characteristics
    9. 5.9  Switching Characteristics
    10. 5.10 Insulation Characteristics Curves
    11. 5.11 Typical Characteristics
  7. 6 Parameter Measurement Information
    1. 6.1 Propagation Delay and Pulse Width Distortion
    2. 6.2 Rising and Falling Time
    3. 6.3 Input and Disable Response Time
    4. 6.4 Programmable Dead Time
    5. 6.5 Power-up UVLO Delay to OUTPUT
    6. 6.6 CMTI Testing
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 7.3.2 Input and Output Logic Table
      3. 7.3.3 Input Stage
      4. 7.3.4 Output Stage
      5. 7.3.5 Diode Structure in the UCC21331-Q1
    4. 7.4 Device Functional Modes
      1. 7.4.1 Enable Pin
      2. 7.4.2 Programmable Dead-Time (DT) Pin
        1. 7.4.2.1 Tying the DT Pin to VCC
        2. 7.4.2.2 DT Pin Connected to a Programming Resistor Between DT and GND Pins
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Designing INA/INB Input Filter
        2. 8.2.2.2 Select External Bootstrap Diode and its Series Resistor
        3. 8.2.2.3 Gate Driver Output Resistor
        4. 8.2.2.4 Gate to Source Resistor Selection
        5. 8.2.2.5 Estimate Gate Driver Power Loss
        6. 8.2.2.6 Estimating Junction Temperature
        7. 8.2.2.7 Selecting VCCI, VDDA/B Capacitor
          1. 8.2.2.7.1 Selecting a VCCI Capacitor
          2. 8.2.2.7.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 8.2.2.7.3 Select a VDDB Capacitor
        8. 8.2.2.8 Dead Time Setting Guidelines
        9. 8.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 8.2.3 Application Curves
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Certifications
    4. 11.4 Receiving Notification of Documentation Updates
    5. 11.5 Support Resources
    6. 11.6 Trademarks
    7. 11.7 Electrostatic Discharge Caution
    8. 11.8 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • D|16
散热焊盘机械数据 (封装 | 引脚)
订购信息

8.2.2.5 Estimate Gate Driver Power Loss

The total loss, PG, in the gate driver subsystem includes the power losses of the UCC21331-Q1 (PGD) and the power losses in the peripheral circuitry, such as the external gate drive resistor. Bootstrap diode loss is not included in PG and not discussed in this section.

PGD is the key power loss which determines the thermal safety-related limits of the UCC21331-Q1, and it can be estimated by calculating losses from several components.

The first component is the static power loss, PGDQ, which includes quiescent power loss on the driver as well as driver self-power consumption when operating with a certain switching frequency. PGDQ is measured on the bench with no load connected to OUTA and OUTB at a given VCCI, VDDA/VDDB, switching frequency and ambient temperature. In this example, VVCCI = 5 V and VVDD = 20 V. The current on each power supply, with INA/INB switching from 0 V to 3.3 V at 100 kHz is measured to be IVCCI = 2.5 mA, and IVDDA = IVDDB = 2.5 mA. Therefore, the PGDQ can be calculated with

Equation 11. P G D Q = V V C C I × I V C C I + V V D D A × I D D A + V V D D B × I D D B = 112.5 m W

The second component is switching operation loss, PGDO, with a given load capacitance which the driver charges and discharges the load during each switching cycle. Total dynamic loss due to load switching, PGSW, can be estimated with

Equation 12. UCC21331-Q1

where

  • QG is the gate charge of the power transistor.

If a split rail is used to turn on and turn off, then VDD is going to be equal to difference between the positive rail to the negative rail.

So, for this example application:

Equation 13. UCC21331-Q1

QG represents the total gate charge of the power transistor switching 800 V at 20 A, and is subject to change with different testing conditions. The UCC21331-Q1 gate driver loss on the output stage, PGDO, is part of PGSW. PGDO will be equal to PGSW if the external gate driver resistances are zero, and all the gate driver loss is dissipated inside the UCC21331-Q1. If there are external turn-on and turn-off resistances, the total loss will be distributed between the gate driver pull-up/down resistances and external gate resistances. Importantly, the pull-up/down resistance is a linear and fixed resistance if the source/sink current is not saturated to 4 A/6 A, however, it will be non-linear if the source/sink current is saturated. Therefore, PGDO is different in these two scenarios.

Case 1 - Linear Pull-Up/Down Resistor:

Equation 14. UCC21331-Q1

In this design example, all the predicted source/sink currents are less than 4 A/6 A, therefore, the UCC21331-Q1 gate driver loss can be estimated with:

Equation 15. P G D O = 240 m W 2 × ( 5 Ω | | 1.47 Ω 5 Ω | | 1.47 Ω + 2.2 Ω + 4.6 Ω + 0.55 Ω 0.55 Ω + 0 Ω + 4.6 Ω ) ) ≈ 30 m W

Case 2 - Nonlinear Pull-Up/Down Resistor:

Equation 16. UCC21331-Q1

where

  • VOUTA/B(t) is the gate driver OUTA and OUTB pin voltage during the turn on and off transient, and it can be simplified that a constant current source (4 A at turn-on and 6 A at turn-off) is charging/discharging a load capacitor. Then, the VOUTA/B(t) waveform will be linear and the TR_Sys and TF_Sys can be easily predicted.

For some scenarios, if only one of the pull-up or pull-down circuits is saturated and another one is not, the PGDO will be a combination of Case 1 and Case 2, and the equations can be easily identified for the pull-up and pull-down based on the above discussion. Therefore, total gate driver loss dissipated in the gate driver UCC21331-Q1, PGD, is:

Equation 17. UCC21331-Q1

which is equal to 142.5 mW in the design example.
千亿体育app官网登录(中国)官方网站IOS/安卓通用版/手机APP | 米乐app下载官网（中国）|ios|Android/通用版APP最新版 | 米乐|米乐·M6（中国大陆）官方网站 | 千亿体育登陆地址 | 华体会体育（中国）HTH·官方网站 | 千赢qy国际_全站最新版千赢qy国际V6.2.14安卓/IOS下载 | 18新利网v1.2.5|中国官方网站 | bob电竞真人（中国官网）安卓/ios苹果/电脑版【1.97.95版下载】 | 千亿体育app官方下载(中国)官方网站IOS/安卓/手机APP下载安装 |