UCC21331-Q1
- Universal: dual low-side, dual high-side or half-bridge driver
- AEC-Q100 qualified with the following result
- Device temperature grade 1
- Junction temperature range –40 to +150°C
- Up to 4A peak source and 6A peak sink output
- Common-mode transient immunity (CMTI) greater than 125V/ns
- Up to 25V VDD output drive supply
- 12V VDD UVLO options
- Switching parameters:
- 33ns typical propagation delay
- 5ns maximum delay matching
- 6ns maximum pulse-width distortion
- 10µs maximum VDD power-up delay
- UVLO protection for all power supplies
- Fast enable for power sequencing
The UCC21331-Q1 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, and IGBT transistors.
The UCC21331-Q1 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 3kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).
Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.
With all these advanced features, the UCC21331-Q1 device enables high efficiency, high power density, and robustness in a wide variety of power applications.
技术文档
类型 | 标题 | 下载最新的英语版本 | 日期 | |||
---|---|---|---|---|---|---|
* | 数据表 | UCC21331x -Q1 Automotive 4A, 6A, 3.0kVRMS Isolated Dual-Channel Gate Driver 数据表 | PDF | HTML | 2024年 5月 2日 |
设计和开发
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