ZHCSF55E June   2016  – December 2021 UCC21520

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 说明（续）
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1  Absolute Maximum Ratings
    2. 7.2  ESD Ratings
    3. 7.3  Recommended Operating Conditions
    4. 7.4  Thermal Information
    5. 7.5  Power Ratings
    6. 7.6  Insulation Specifications
    7. 7.7  Safety-Related Certifications
    8. 7.8  Safety-Limiting Values
    9. 7.9  Electrical Characteristics
    10. 7.10 Switching Characteristics
    11. 7.11 Insulation Characteristics Curves
    12. 7.12 Typical Characteristics
  8. 8 Parameter Measurement Information
    1. 8.1 Propagation Delay and Pulse Width Distortion
    2. 8.2 Rising and Falling Time
    3. 8.3 Input and Disable Response Time
    4. 8.4 Programable Dead Time
    5. 8.5 Power-up UVLO Delay to OUTPUT
    6. 8.6 CMTI Testing
  9. 9 Detailed Description
    1. 9.1 Overview
    2. 9.2 Functional Block Diagram
    3. 9.3 Feature Description
      1. 9.3.1 VDD, VCCI, and Undervoltage Lock Out (UVLO)
      2. 9.3.2 Input and Output Logic Table
      3. 9.3.3 Input Stage
      4. 9.3.4 Output Stage
      5. 9.3.5 Diode Structure in the UCC21520 and the UCC21520A
    4. 9.4 Device Functional Modes
      1. 9.4.1 Disable Pin
      2. 9.4.2 Programmable Dead-Time (DT) Pin
        1. 9.4.2.1 Tying the DT Pin to VCC
        2. 9.4.2.2 DT Pin Connected to a Programming Resistor between DT and GND Pins
        3. 9.4.2.3 41
  10. 10Application and Implementation
    1. 10.1 Application Information
    2. 10.2 Typical Application
      1. 10.2.1 Design Requirements
      2. 10.2.2 Detailed Design Procedure
        1. 10.2.2.1 Designing INA/INB Input Filter
        2. 10.2.2.2 Select External Bootstrap Diode and its Series Resistor
        3. 10.2.2.3 Gate Driver Output Resistor
        4. 10.2.2.4 Gate to Source Resistor Selection
        5. 10.2.2.5 Estimate Gate Driver Power Loss
        6. 10.2.2.6 Estimating Junction Temperature
        7. 10.2.2.7 Selecting VCCI, VDDA/B Capacitor
          1. 10.2.2.7.1 Selecting a VCCI Capacitor
          2. 10.2.2.7.2 Selecting a VDDA (Bootstrap) Capacitor
          3. 10.2.2.7.3 Select a VDDB Capacitor
        8. 10.2.2.8 Dead Time Setting Guidelines
        9. 10.2.2.9 Application Circuits with Output Stage Negative Bias
      3. 10.2.3 Application Curves
  11. 11Power Supply Recommendations
  12. 12Layout
    1. 12.1 Layout Guidelines
    2. 12.2 Layout Example
  13. 13Device and Documentation Support
    1. 13.1 第三方米6体育平台手机版_好二三四免责声明
    2. 13.2 Documentation Support
      1. 13.2.1 Related Documentation
    3. 13.3 Certifications
    4. 13.4 Receiving Notification of Documentation Updates
    5. 13.5 支持资源
    6. 13.6 Trademarks
    7. 13.7 Electrostatic Discharge Caution
    8. 13.8 术语表
  14. 14Mechanical, Packaging, and Orderable Information

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

10.2.1 Design Requirements

Table 10-1 lists reference design parameters for the example application: UCC21520 driving 1200-V SiC-MOSFETs in a high side-low side configuration.

Table 10-1 UCC21520 Design Requirements
PARAMETERVALUEUNITS
Power transistorC2M0080120D-
VCC5.0V
VDD20V
Input signal amplitude3.3V
Switching frequency (fs)100kHz
DC link voltage800V
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