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ZHCSIL2C July 2018 – March 2022 UCC24624

PRODUCTION DATA

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机械数据 (封装 | 引脚)

D|8
- MSOI002K

散热焊盘机械数据 (封装 | 引脚)

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7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Input voltage⁽¹⁾	VDD⁽³⁾	–0.3	28	V
	VD1, VD2	–0.7	230	V
	VD1, VD2 for I_VD1, I_VD2 ≤ –10 mA and less than 300 ns	–2	230	V
Output voltage	VG1, VG2	–0.3	V_REG+0.7	V
Output voltage	REG		13.5	V
Output current, peak	VG1 or VG2⁽²⁾ pulsed, t_PULSE ≤ 4 ms, duty cycle ≤ 1%		±4	A
T_J	Junction temperature	–40	125	°C
T_stg	Storage temperature	–65	150	°C

(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) In normal use, VG1 or VG2 is connected to the gate of a power MOSFET through a small resistor. When used this way, VG1 or VG2current is limited by the UCC24624 and no absolute maximum output current considerations are required. The series resistor shall beselected to minimize overshoot and ringing due to series inductance of the VG1 or VG2 output and power-MOSFET gate-drive loop.Continuous VG1 or VG2 current is subject to the maximum operating junction temperature limitation.

(3) VDD is internally clamped at 27.5 V typical with 15 mA of sink current capability.