The circuit configuration in Figure 8-5 includes an addition 13-V supply, which is configured to bias the gate of the IGBT at 13-V negative with respect to its emitter. The negative voltage on the gate terminal ensures safe turn off of the IGBT and ensures that the IGBT remains in the blocking state in the presence of high dv/dt voltages on the collector terminal.

Figure 8-5 Driving IGBT With 13-V Negative Turnoff Bias Schematic