米6体育平台手机版

ZHCSC00C December 2013 – September 2024 UCC27532-Q1

PRODUCTION DATA

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机械数据 (封装 | 引脚)

DBV|6
- MPDS026Q

散热焊盘机械数据 (封装 | 引脚)

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6.5 Electrical Characteristics

Unless otherwise noted, VDD = 18 V, T_A = T_J = –40°C to 140°C, IN switching from 0 V to VDD, 1-µF capacitor from VDD to GND, ƒ = 100 kHz. Currents are positive into and negative out of the specified terminal. OUTH and OUTL are tied together. Typical condition specifications are at 25°C.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
BIAS CURRENTS
I_DDoff	Startup current, VDD = 7	IN, EN = VDD	100	240	350	μA
I_DDoff	Startup current, VDD = 7	IN, EN = GND	100	250	350	μA
UNDERVOLTAGE LOCKOUT (UVLO)
V_ON	Supply start threshold		8	8.9	9.8	V
V_OFF	Minimum operating voltage after supply start		7.3	8.2	9.1	V
V_{DD_H}	Supply voltage hysteresis			0.7		V
INPUT (IN)
V_{IN_H}	Input signal high threshold	VDD = 16V, Output high	8.8	9.4	10	V
V_{IN_L}	Input signal low threshold	VDD = 16V, Output low	6.7	7.3	7.9	V
V_{IN_HYS}	Input signal hysteresis	VDD = 16V		2.1		V
ENABLE (EN)
V_{EN_H}	Enable signal high threshold	VDD = 16V, Output high	1.7	1.9	2.1	V
V_{EN_L}	Enable signal low threshold	VDD = 16V, Output low	0.8	1	1.2	V
V_{EN_HYS}	Enable signal hysteresis	VDD = 16V		0.9		V
OUTPUTS (OUTH/OUTL)
I_SRC/SNK	Source peak current (OUTH)/ sink peak current (OUTL)⁽¹⁾	C_LOAD = 0.22 µF, ƒ = 1 kHz		–2.5 / 5		A
V_OH	OUTH, high voltage	I_OUTH = –10 mA	VDD –0.2	VDD –0.12	VDD –0.07	V
V_OL	OUTL, low voltage	I_OUTL = 100 mA		0.065	0.125	V
R_OH	OUTH, pullup resistance⁽¹⁾	T_A = 25°C, I_OUT = -10 mA	11	12	12.5	Ω
R_OH	OUTH, pullup resistance⁽¹⁾	T_A = –40°C to 140°C, I_OUT = -10 mA	7	12	20	Ω
R_OL	OUTL, pulldown resistance	T_A = 25°C, I_OUT = 100 mA	0.45	0.65	0.85	Ω
R_OL	OUTL, pulldown resistance	T_A = –40°C to 140°C, I_OUT = 100 mA	0.3	0.65	1.25	Ω

(1) Output pullup resistance here is a DC measurement that measures resistance of PMOS structure only, not N-channel structure. The effective dynamic pullup resistance is 3 × R_OL.