米6体育平台手机版

ZHCSOH9C April 2020 – February 2023 UCC27624

PRODUCTION DATA

封装选项

机械数据 (封装 | 引脚)

D|8
- MSOI002K
DGN|8
- MPDS046G

散热焊盘机械数据 (封装 | 引脚)

DGN|8
- PPTD388A

订购信息

6.5 Electrical Characteristics

Unless otherwise noted, VDD = 12 V, T_A = T_J = –40°C to 150°C, 1-µF capacitor from VDD to GND, no load on the output. Typical condition specifications are at 25°C.

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
BIAS CURRENTS
I_VDDq	VDD quiescent supply current	V_INx = 3.3 V, VDD = 3.4 V, ENx = VDD		300	450	μA
I_VDD	VDD static supply current	V_INx = 3.3 V, ENx = VDD		0.6	1.0	mA
I_VDD	VDD static supply current	V_INx = 0 V, ENx = VDD		0.7	1.0	mA
I_VDDO	VDD operating current	f_SW = 1000 kHz, ENx = VDD, V_INx = 0 V – 3.3 V PWM		3.2	3.8	mA
I_DIS	VDD disable current	V_INx = 3.3 V, ENx = 0 V		0.8	1.1	mA
UNDERVOLTAGE LOCKOUT (UVLO)
V_{VDD_ON}	VDD UVLO rising threshold		3.8	4.1	4.4	V
V_{VDD_OFF}	VDD UVLO falling threshold		3.5	3.8	4.1	V
V_{VDD_HYS}	VDD UVLO hysteresis			0.3		V
INPUT (INA, INB)
V_{INx_H}	Input signal high threshold	Output High, ENx = HIGH	1.8	2	2.3	V
V_{INx_L}	Input signal low threshold	Output Low, ENx = HIGH	0.8	1	1.2	V
V_{INx_HYS}	Input signal hysteresis			1		V
R_INx	INx pin pulldown resistor	INx = 3.3 V		120		kΩ
ENABLE (ENA, ENB)
V_{ENx_H}	Enable signal high threshold	Output High, INx = HIGH	1.8	2	2.3	V
V_{ENx_L}	Enable signal low threshold	Output Low, INx = HIGH	0.8	1	1.2	V
V_{ENx_HYS}	Enable signal hysteresis			1		V
R_ENx	EN pin pullup resistance	ENx = 0 V		200		kΩ
OUTPUTS (OUTA, OUTB)
I_SRC⁽¹⁾	Peak output source current	VDD = 12 V, C_VDD = 10 µF, C_L = 0.1 µF, f = 1 kHz		5		A
I_SNK⁽¹⁾	Peak output sink current	VDD = 12 V, C_VDD = 10 µF, C_L = 0.1 µF, f = 1 kHz		–5		A
R_OH⁽²⁾	Pullup resistance	I_OUT = –50 mA, See GUID-8FBBDFD5-7EAD-4E0E-B811-85FFDDB83784.html.		5	8.5	Ω
R_OL	Pulldown resistance	I_OUT = 50 mA		0.6	1.1	Ω

(1) Parameter not tested in production.

(2) Output pullup resistance in this table is a DC measurement that measures resistance of PMOS structure only (not N-channel structure).