ZHCSDC4 February   2015 UCC28730

PRODUCTION DATA.  

  1. 特性
  2. 应用
  3. 说明
  4. 修订历史记录
  5. Pin Configuration and Functions
    1. 5.1 Detailed Pin Description
      1. 5.1.1 VDD (Device Bias Voltage Supply)
      2. 5.1.2 GND (Ground)
      3. 5.1.3 HV (High Voltage Startup)
      4. 5.1.4 DRV (Gate Drive)
      5. 5.1.5 CBC (Cable Compensation)
      6. 5.1.6 VS (Voltage Sense)
      7. 5.1.7 CS (Current Sense)
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  7. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Primary-Side Regulation (PSR)
      2. 7.3.2 Primary-Side Constant Voltage Regulation
      3. 7.3.3 Primary-Side Constant Current Regulation
      4. 7.3.4 Wake-Up Detection and Function
      5. 7.3.5 Valley-Switching and Valley-Skipping
      6. 7.3.6 Startup Operation
      7. 7.3.7 Fault Protection
    4. 7.4 Device Functional Modes
  8. Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Stand-By Power Estimate
        2. 8.2.2.2 Input Bulk Capacitance and Minimum Bulk Voltage
        3. 8.2.2.3 Transformer Turns Ratio, Inductance, Primary-Peak Current
        4. 8.2.2.4 Transformer Parameter Verification
        5. 8.2.2.5 Output Capacitance
        6. 8.2.2.6 VDD Capacitance, CVDD
        7. 8.2.2.7 VS Resistor Divider, Line Compensation, and Cable Compensation
        8. 8.2.2.8 VS Wake-Up Detection
      3. 8.2.3 Application Curves
    3. 8.3 Do's and Don'ts
  9. Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11器件和文档支持
    1. 11.1 器件支持
      1. 11.1.1 器件命名规则
        1. 11.1.1.1  电容术语(以法拉为单位)
        2. 11.1.1.2  占空比相关术语
        3. 11.1.1.3  频率术语(以赫兹为单位)
        4. 11.1.1.4  电流术语(以安培为单位)
        5. 11.1.1.5  电流和电压调节术语
        6. 11.1.1.6  变压器术语
        7. 11.1.1.7  功率术语(以瓦特为单位)
        8. 11.1.1.8  电阻术语(以 Ω 为单位)
        9. 11.1.1.9  时序术语(以秒为单位)
        10. 11.1.1.10 直流电压术语(以伏特为单位)
        11. 11.1.1.11 交流电压术语(以伏特为单位)
        12. 11.1.1.12 效率术语
    2. 11.2 文档支持
      1. 11.2.1 相关文档
    3. 11.3 商标
    4. 11.4 静电放电警告
    5. 11.5 术语表
  12. 12机械封装和可订购信息

封装选项

机械数据 (封装 | 引脚)
散热焊盘机械数据 (封装 | 引脚)
订购信息

5 Pin Configuration and Functions

D Package
7-Pin SOIC
Top View
UCC28730 pin_lusbl5.gif

Pin Functions(1)

PIN I/O DESCRIPTION
NAME NO.
VDD 1 P VDD is the bias supply input pin to the controller. A carefully-placed by-pass capacitor to GND is required on this pin.
VS 2 I Voltage Sense is an input used to provide voltage feed-back and demagnetization timing to the controller for output voltage regulation, frequency limiting, constant-current control, line voltage detection, and output over-voltage detection. This pin is connected to a voltage divider between an auxiliary winding and GND. The value of the upper resistor of this divider is used to program the AC-mains run and stop thresholds and line compensation at the CS pin. This input also detects a qualified wake-up signal when operating in the Wait state.
CBC 3 I CaBle Compensation is a programming pin for compensation of cable voltage drop. Cable compensation is programmed with a resistor to GND.
GND 4 G The GrouND pin is both the reference pin for the controller and the low-side return for the drive output. Special care should be taken to return all AC decoupling capacitors as close as possible to this pin and avoid any common trace length with power and signal return paths.
CS 5 I Current Sense input connects to a ground-referenced current-sense resistor in series with the power switch. The resulting voltage is used to monitor and control the peak primary current. A series resistor can be added to this pin to compensate the peak switch current levels as the rectified bulk voltage varies.
DRV 6 O DRiVe is an output used to drive the gate of an external high-voltage MOSFET switching transistor.
HV 7 I The High Voltage pin connects directly to the rectified bulk voltage and provides charge to the VDD capacitor for start-up of the power supply.
(1) P = Power, G = Ground, I = Input, O = Output, I/O = Input/Output

5.1 Detailed Pin Description

5.1.1 VDD (Device Bias Voltage Supply)

The VDD pin connects to a by-pass capacitor to ground. The turn-on UVLO threshold is 21 V and turn-off UVLO threshold is 7.7 V with an available operating range up to 35 V on VDD. The typical USB charging specification requires the output current to operate in Constant-Current mode from 5 V down to at least 2 V, which is easily achieved with a nominal VVDD of approximately 20 V. The additional VDD headroom up to 35 V allows for VVDD to rise due to the leakage energy delivered to the VDD capacitor during high-load conditions.

5.1.2 GND (Ground)

UCC28730 has a single ground reference external to the device for the gate-drive current and analog signal reference. Place the VDD-bypass capacitor close to GND and VDD with short traces to minimize noise on the VS and CS signal pins.

5.1.3 HV (High Voltage Startup)

The HV pin connects directly to the bulk capacitor to provide startup current to the VDD capacitor. The typical startup current is approximately 250 µA which provides fast charging of the VDD capacitor. The internal HV startup device is active until VVDD exceeds the turn-on UVLO threshold of 21 V at which time the HV startup device turns off. In the off state the HV leakage current is very low to minimize stand-by losses of the controller. When VVDD falls below the 7.7-V UVLO turn-off threshold the HV startup device turns on.

5.1.4 DRV (Gate Drive)

The DRV pin connects to the MOSFET gate pin, usually through a series resistor. The gate driver provides a gate-drive signal limited to 14 V. The turn-on characteristic of the driver is a 29-mA current source which limits the turn-on dv/dt of the MOSFET drain and reduces the leading-edge current spike, while still providing a gate-drive current to overcome the Miller plateau. The gate-drive turn-off current is determined by the RDS(on) of the low-side driver and any external gate drive resistance. Adding external gate resistance reduces the MOSFET drain turn-off dv/dt, if necessary. Such resistance value is generally higher than the typical 10 Ω commonly used to damp resonance. However, calculation of the external resistance value to achieve a specific dv/dt involves MOSFET parameters beyond the scope of this datasheet.

5.1.5 CBC (Cable Compensation)

The cable compensation pin is connected to a resistor to ground to program the amount of output voltage compensation needed to offset cable resistance. The cable compensation circuit generates a 0 to 3.13-V voltage level on the CBC pin corresponding to 0 A to IOCC maximum output current. The resistance selected on the CBC pin programs a current mirror that is summed into the VS feedback divider therefore increasing the regulation voltage as IOUT increases. There is an internal series resistance of 28 kΩ to the CBC pin which sets a maximum cable compensation for a 5-V output to approximately 400 mV when CBC is shorted to ground. The CBC resistance value can be determined using Equation 1.

Equation 1. UCC28730 qu5_lusbl5.gif

where

  • VCBC(max) is the maximum voltage at the cable compensation pin at the maximum converter output current (see Electrical Characteristics),
  • VOCV is the regulated output voltage,
  • VF is the diode forward voltage,
  • VVSR is the CV regulating level at the VS input (see Electrical Characteristics),
  • VOCBC is the target cable compensation voltage at the output terminals.

Note that the cable compensation does not change the overvoltage protection (OVP) threshold, VOVP (see Electrical Characteristics), so the operating margin to OVP is less when cable compensation is used.

5.1.6 VS (Voltage Sense)

The VS pin connects to a resistor-divider from the auxiliary winding to ground and is used to sense input voltage, output voltage, event timing, and Wait-state wake-up signaling. The auxiliary voltage waveform is sampled at the end of the transformer secondary current demagnetization time to provide an accurate representation of the output voltage. The waveform on the VS pin determines the timing information to achieve valley-switching, and the timing to control the duty-cycle of the transformer secondary current when in Constant-Current Mode. Avoid placing a filter capacitor on this input which interferes with accurate sensing of this waveform.

During the MOSFET on-time, this pin also senses VS current generated through RS1 by the reflected bulk-capacitor voltage to provide for AC-input Run and Stop thresholds, and to compensate the current-sense threshold across the AC-input range. For the AC-input Run/Stop function, the Run threshold on VS is 225 µA and the Stop threshold is 80 µA.

At the end of off-time demagnetization, the reflected output voltage is sampled at this pin to provide regulation and overvoltage protection. The values for the auxiliary voltage-divider upper-resistor, RS1, and lower-resistor, RS2, are determined by Equation 2 and Equation 3.

Equation 2. UCC28730 qu1_lusbl5.gif

where

  • VIN(run) is the target AC RMS voltage to enable turn-on of the controller (Run) (in case of DC input, leave out the √2 term in the equation),
  • IVSL(run) is the Run-threshold for the current pulled out of the VS pin during the switch on-time (see Electrical Characteristics),
  • NPA is the transformer primary-to-auxiliary turns-ratio.
Equation 3. UCC28730 qu2_lusbl5.gif

where

  • VOCV is the converter regulated output voltage,
  • VF is the output rectifier forward drop at near-zero current,
  • NAS is the transformer auxiliary-to-secondary turns-ratio,
  • RS1 is the VS divider high-side resistance,
  • VVSR is the CV regulating level at the VS input (see Electrical Characteristics).

When the UCC28730 is operating in the Wait state, the VS input is receptive to a wake-up signal superimposed upon the auxiliary winding waveform after the waveform meets either of two qualifying conditions. A high-level wake-up signal is considered to be detected if the amplitude at the VS input exceeds VWU(high) (2 V) provided that any voltage at VS has been continuously below VWU(high) for the wake-up qualification delay tWDLY (8.5 us) after the demagnetization interval. A low-level wake-up signal is considered to be detected if the amplitude at the VS input exceeds VWU(low) (57 mV) provided that any voltage at VS has been continuously below VWU(low) for the wake-up qualification delay tWDLY (8.5 us) after the demagnetization interval. The high-level threshold accommodates signals generated by a low-impedance secondary-side driver while the low-level threshold detects signals generated by a high-impedance driver.

5.1.7 CS (Current Sense)

The current-sense pin connects to a series resistor (RLC) to the current-sense resistor (RCS). The maximum current-sense threshold (VCST(max)) is approximately 0.74 V for IPP(max) and minimum current-sense threshold (VCST(min)) is approximately 0.25 V for IPP(min). RLC provides the function of feed-forward line compensation to eliminate changes in IPP with input voltage due to the propagation delay of the internal comparator and MOSFET turn-off time. An internal leading-edge blanking time of 225 ns eliminates sensitivity to the MOSFET turn-on current spike. It should not be necessary to place a bypass capacitor on the CS pin. The target output current in constant-current (CC) regulation determines the value of RCS. The values of RCS and RLC are calculated by Equation 4 and Equation 5. The term VCCR is the product of the demagnetization constant, 0.432, and VCST(max). VCCR is held to a tighter accuracy than either of its constituent terms. The term ηXFMR accounts for the energy stored in the transformer but not delivered to the secondary. This term includes transformer resistance and core loss, bias power, and primary-to-secondary leakage ratio.

Example: With a transformer core and winding loss of 5%, primary-to-secondary leakage inductance of 3.5%, and bias-power to output-power ratio of 0.5%, the ηXFMR value at full-power is: 1 - 0.05 - 0.035 - 0.005 = 0.91.

Equation 4. UCC28730 qu3_lusbl5.gif

where

  • VCCR is a constant-current regulation factor (see Electrical Characteristics),
  • NPS is the transformer primary-to-secondary turns-ratio, (a ratio of 13 to 15 is typical for a 5-V output),
  • IOCC is the target output current in constant-current regulation,
  • ηXFMR is the transformer efficiency at full-power output.
Equation 5. UCC28730 qu4_lusbl5.gif

where

  • KLC is a current-scaling constant for line compensation (see Electrical Characteristics),
  • RS1 is the VS pin high-side resistor value,
  • RCS is the current-sense resistor value,
  • NPA is the transformer primary-to-auxiliary turns-ratio,
  • tD is the total current-sense delay consisting of MOSFET turn-off delay, plus approximately 50-ns internal delay,
  • LP is the transformer primary inductance.