ZHCSQ75C June 2022 – March 2023 UCC28C50-Q1 , UCC28C51-Q1 , UCC28C52-Q1 , UCC28C53-Q1 , UCC28C54-Q1 , UCC28C55-Q1 , UCC28C56H-Q1 , UCC28C56L-Q1 , UCC28C57H-Q1 , UCC28C57L-Q1 , UCC28C58-Q1 , UCC28C59-Q1
PRODUCTION DATA
- 1 特性
- 2 应用
- 3 说明
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
-
8 Detailed Description
- 8.1 Overview
- 8.2 Functional Block Diagram
- 8.3 Feature Description
- 8.4 Device Functional Modes
-
9 Application and Implementation
- 9.1 Application Information
- 9.2
Typical Application
- 9.2.1 Design Requirements
- 9.2.2
Detailed Design Procedure
- 9.2.2.1 Primary-to-Secondary Turns Ratio of the Flyback Transformer (NPS)
- 9.2.2.2 Primary Magnetizing Inductance of the Flyback Transformer (LM)
- 9.2.2.3 Number of Turns of the Flyback Transformer Windings
- 9.2.2.4 Current Sense Resistors (R24, R25) and Current Limiting
- 9.2.2.5 Primary Clamp Circuit (D7, D1, D3, R2, R28) to Limit Voltage Stress
- 9.2.2.6 Primary-Side Current Stress and Input Capacitor Selection
- 9.2.2.7 Secondary-Side Current Stress and Output Capacitor Selection
- 9.2.2.8 VDD Capacitors (C12, C18)
- 9.2.2.9 Gate Drive Network (R14, R16, Q6)
- 9.2.2.10 VREF Capacitor (C18)
- 9.2.2.11 RT/CT Components (R12, C15)
- 9.2.2.12 HV Start-Up Circuitry for VDD (Q1, Q2, D2, D4, D6, D8, R5)
- 9.2.2.13 Desensitization to CS-pin Noise by RC Filtering, Leading-Edge Blanking, and Slope Compensation
- 9.2.2.14 Voltage Feedback Compensation
- 9.2.3 Application Curves
- 9.3 PCB Layout Recommendations
- 9.4 Power Supply Recommendations
- 10Device and Documentation Support
- 11Mechanical, Packaging, and Orderable Information
3 说明
UCC28C5x-Q1 系列器件为高性能电流模式 PWM 控制器，可用于驱动各种应用中的 Si 和 SiC MOSFET。UCC28C5x-Q1 系列是 UCC28C4x-Q1 的更高效、更稳健的版本。
除持续支持 Si MOSFET 的现有 UVLO 阈值 (UCC28C50-55-Q1) 外，UCC28C5x-Q1 系列还具有可确保 SiC MOSFET 可靠运行的新 UVLO 阈值 (UCC28C56-59-Q1)。
VDD 绝对最大额定电压从 20V 增加至 30V，便于以理想方式驱动 20Vgs、18Vgs 或 15Vgs SiC MOSFET 的栅极，同时可无需使用外部 LDO。
器件性能改进
| 参数 | UCC28C4x-Q1 | UCC28C5x-Q1 |
|---|---|---|
| 52kHz 时的电源电流 | 2.3mA | 1.3mA |
| 启动电流（上限值） | 100µA | 75µA |
| VDD 绝对上限值 | 20V | 30V |
| 基准电压精度 | ±2% | ±1% |
| Si FET 的 UVLO 和 DMAX | 6 个选项 | 6 个选项 |
| SiC FET 的 UVLO 和 DMAX | none | 6 个选项 |
- 如需了解所有可用封装，请参阅数据表末尾的可订购米6体育平台手机版_好二三四附录。
图 3-1 典型汽车应用